STMicroelectronics VNB20N0713TR

Overview

VNB20N0713TR from STMicroelectronics is a fully autoprotected monolithic N-channel Power MOSFET in PowerSO-10 package, designed as a robust replacement for standard power MOSFETs in DC–50 kHz switching applications. It features 70 V drain-source clamp voltage, 0.05 Ω R_DS(on) at V_IN = 10 V, 20 A current limit, integrated thermal shutdown at 150 °C, and diagnostic feedback via the input pin - deployed in industrial motor control, solenoid drivers, and automotive body electronics.

For engineers reviewing the VNB20N0713TR datasheet, VNB20N0713TR pinout, VNB20N0713TR application, or VNB20N0713TR equivalent, key selection criteria include its linear current limiting behavior, fault-sink capability (50 mA at 10 V), unclamped avalanche energy rating (0.95 J), and compatibility with TTL-level drive despite gate-connected input architecture.

Technical Context

This device integrates gate driver, protection logic, and power MOSFET on a single die using ST's VIPower M0 technology. Its input pin directly connects to the internal gate during normal operation but switches to a 100 Ω fault-sink path during overtemperature events - enabling real-time status detection without external circuitry.

The protection architecture combines three independent mechanisms: voltage-clamped avalanche ruggedness (V_CLAMP = 70 V typ), step-response current limiting (t_dlim = 29 µs at 10 V), and junction-temperature sensing with hysteresis (T_jsh = 150 °C / T_jrs = 135 °C), all operating independently of input voltage level.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Thermal resistance: R_thj-case = 1.5 °C/W, R_thj-amb = 50 °C/W (with PCB copper area).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected power switch applications.

Compared with STSPIN250 and VND5E025AK, VNB20N0713TR uniquely balances 70 V ruggedness, 20 A linear current limiting, and diagnostic feedback in a compact PowerSO-10 package - making it optimal for high-energy DC load switching where fault visibility and inductive survivability are critical.

Availability

VNB20N0713TR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable logic outputs, and industrial solenoid drivers requiring stable component supply across multi-year production cycles.

Supply support for VNB20N0713TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing capabilities.

VNB20N0713TR belongs to the OMNIFET family of protected power switches, engineered specifically for replacing discrete MOSFETs in harsh-environment DC switching applications where reliability, diagnostic capability, and design simplification are prioritized.

FAQ

What is the maximum continuous drain current for VNB20N0713TR?

The device features an internally limited 20 A drain current (I_lim) at V_IN = 10 V, with thermal derating applied above T_c = 25 °C. At full case temperature rating, continuous current drops to ~12 A due to R_thj-case = 1.5 °C/W and T_jsh = 150 °C. Peak pulsed current remains 20 A for durations < 100 µs.

Can VNB20N0713TR be driven directly by a 3.3 V microcontroller GPIO?

No - the input threshold voltage (V_IN(th)) ranges from 0.8 V to 3 V, but full enhancement requires ≥5 V to achieve rated R_DS(on) = 0.05 Ω. At 3.3 V, R_DS(on) rises to ~0.07 Ω, increasing conduction loss by ~40%. A level-shifting buffer or 5 V supply is recommended for optimal performance.

How does the diagnostic feedback mechanism work during overtemperature fault?

When junction temperature reaches 150 °C, internal circuitry disconnects the input pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the input voltage to ≤0.5 V (at ≤5 mA sink), providing a clean logic-low signal detectable by any MCU GPIO without external components - enabling immediate software response.

Is external heatsinking required for 10 A continuous operation?

Yes - at 10 A and R_DS(on) = 0.05 Ω, power dissipation is 5 W. With R_thj-case = 1.5 °C/W and ambient at 25 °C, junction temperature would reach ~100 °C without heatsinking. A minimum 25 cm² copper pour (2 oz) is required; forced-air cooling or external heatsink is advised for sustained 10 A operation above 50 °C ambient.