STMicroelectronics VNB28N04-E

Overview

VNB28N04-E from STMicroelectronics is a fully autoprotected monolithic VIPower M0 high-side power switch, integrating a 42 V clamped N-channel MOSFET with linear current limiting (28 A), thermal shutdown (150 °C), and diagnostic feedback via the input pin. It replaces standard power MOSFETs in DC–50 kHz inductive load switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNB28N04-E datasheet, VNB28N04-E pinout, VNB28N04-E application, or VNB28N04-E equivalent, key selection criteria include its 0.035 Ω R_DS(on) at 10 V_IN, integrated overvoltage clamp, fault-sensing capability through the input pin, and compatibility with TTL-level driving.

Technical Context

This device implements a high-side switch architecture with direct gate access for analog driving, enabling precise control of turn-on/turn-off dynamics. Its linear current limiter operates independently of input voltage and maintains constant I_lim across temperature (19–28 A), while internal thermal sensing triggers shutdown at ≥150 °C and automatic restart at ≤135 °C.

The integrated 42 V avalanche-rated clamp protects against inductive kickback during switching, and diagnostic feedback is delivered by pulling the input pin to ground (100 Ω equivalent) during fault conditions. ESD protection meets 2000 V HBM, and total input charge is 60 nC at 12 V.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Thermal resistance: R_thj-case = 1.5 °C/W, R_thj-amb = 50 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN250 and IPS1021H, VNB28N04-E uniquely combines 28 A linear current limiting, 42 V clamp, and single-pin fault feedback - making it optimal for cost-sensitive, high-reliability 12 V inductive load switching where diagnostics and ruggedness are mandatory.

Availability

VNB28N04-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial valve control, smart lighting ballasts, and DC motor starter circuits requiring stable component supply and long-term production continuity.

Supply support for VNB28N04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

VNB28N04-E belongs to the OMNIFET family of VIPower M0 high-side switches, engineered specifically for replacing discrete MOSFETs + protection circuits in harsh-environment DC load switching up to 50 kHz.

FAQ

What is the maximum recommended operating frequency for VNB28N04-E?

VNB28N04-E is rated for DC to 50 kHz operation per ST's official specification. Its switching times (e.g., 100–900 ns turn-on delay, 155–400 ns fall time with 10 Ω gate resistor) support efficient PWM control within this range. Operation beyond 50 kHz risks exceeding thermal limits due to increased switching losses and reduced time for heat dissipation.

Can VNB28N04-E be used in low-side configuration?

No - VNB28N04-E is designed exclusively as a high-side switch. Its internal architecture ties the source terminals to ground reference and exposes the drain as the high-current output terminal. Attempting low-side use would reverse internal protection logic and disable fault feedback, violating absolute maximum ratings and voiding functional safety guarantees.

How does the diagnostic feedback signal work during overtemperature fault?

During overtemperature shutdown, the internal protection circuit disconnects the input pin from the gate and connects it to ground through a 100 Ω internal resistor. This pulls the input voltage near 0 V, detectable by an MCU ADC or comparator. The fault remains active until junction temperature falls below 135 °C, at which point the device automatically resumes normal operation.

Is external freewheeling diode required when driving inductive loads?

Yes - although VNB28N04-E integrates an avalanche-rated MOSFET and 42 V clamp, it does not include an internal freewheeling diode. An external Schottky or fast-recovery diode must be connected from load to supply (cathode to supply, anode to load) to provide a safe current path during turn-off and prevent excessive voltage overshoot beyond the clamp threshold.