STMicroelectronics VNB28N04TR-E

Overview

VNB28N04TR-E from STMicroelectronics is a fully autoprotected monolithic power MOSFET in PowerSO-10 package, integrating linear current limiting (28 A), overvoltage clamp (42 V), thermal shutdown (150 °C), and diagnostic feedback via input pin. It replaces standard N-channel MOSFETs in DC–50 kHz industrial switching applications such as motor control, solenoid drivers, and lighting ballasts.

For engineers reviewing the VNB28N04TR-E datasheet, VNB28N04TR-E pinout, VNB28N04TR-E application, or VNB28N04TR-E equivalent, key selection criteria include R_DS(on) (0.035 Ω @ 10 V), fault-sensing capability via input pin voltage, integrated avalanche energy rating (2.5 J), and compatibility with TTL-level drive without external gate resistors.

Technical Context

This device implements ST's VIPower M0 technology to embed protection logic directly on-die: a linear current limiter maintains constant I_lim across input voltage (5–10 V), while thermal shutdown and reset thresholds (150 °C / 135 °C) are sensed at the power stage for fast response. Fault detection is achieved by internal 100 Ω pull-down activation on the input pin during overtemperature events.

The integrated clamp diode enables unclamped inductive load switching up to 50 kHz, with specified E_AS = 2.5 J (V_DD = 20 V). Gate drive is direct-no level shifter required-and input current draw remains low (250–600 µA), supporting microcontroller GPIO interfacing.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab, 10-pin leadframe). Thermal resistance R_thj-case = 3.75 °C/W enables 83 W dissipation at T_c = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side power switch applications.

Compared with STSPIN250 and IPS1021H, VNB28N04TR-E delivers highest continuous current (28 A), lowest R_DS(on) (0.035 Ω), and largest avalanche energy (2.5 J), making it optimal for ruggedized 24 V industrial DC switching where protection integrity and thermal headroom are critical.

Availability

VNB28N04TR-E is available at Aetrix Electronics and suitable for industrial motor control, solenoid actuation, and programmable power outlet designs requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for VNB28N04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

VNB28N04TR-E belongs to the OMNIFET™ family of autoprotected power switches, engineered specifically for replacing discrete MOSFETs + protection circuitry in harsh-environment DC switching applications up to 50 kHz.

FAQ

What is the maximum continuous drain current for VNB28N04TR-E?

The device features an internally limited drain current of 28 A (typical) under normal operating conditions. This limit is enforced linearly across input voltages from 5 V to 10 V and remains stable over junction temperatures from –40 °C to 125 °C, as verified in ST's characterization data.

How does fault feedback work on the input pin?

During overtemperature fault, the internal protection circuit disconnects the input pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the input pin voltage near 0 V, detectable by an MCU ADC or comparator - no external components needed for basic fault signaling.

Can VNB28N04TR-E be driven directly by a 3.3 V microcontroller GPIO?

Yes. Its input threshold voltage ranges from 0.8 V (min) to 3 V (max), and it draws only 250–600 µA from the input pin. A 3.3 V GPIO can reliably turn it on without level shifting or buffering, though R_DS(on) will be slightly higher (0.05 Ω typ.) than at 10 V drive.

Is external heatsinking required for 28 A operation?

At full 28 A continuous current, the device dissipates ~27.4 W (P = I² × R_DS(on)). With R_thj-case = 3.75 °C/W, junction temperature rise is ~103 °C above case temperature. A properly designed 4-layer PCB with ≥200 cm² copper pour is mandatory; forced air or heatsink is recommended for ambient >50 °C.