STMicroelectronics VNB35N07-E

Overview

VNB35N07-E from STMicroelectronics is a fully autoprotected monolithic VIPower M0 high-side power switch MOSFET with integrated linear current limiting, thermal shutdown, overvoltage clamp (70 V), and diagnostic feedback via input pin. It delivers 35 A continuous drain current, 0.028 Ω R_DS(on) at V_IN = 10 V, and operates up to 50 kHz in DC–inductive load switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNB35N07-E datasheet, VNB35N07-E pinout, VNB35N07-E application, or VNB35N07-E equivalent, key selection criteria include its built-in fault detection capability, rugged unclamped inductive switching performance (E_AS = 2.5 J), direct gate access for analog driving, and compatibility with TTL-level logic inputs - all critical for robust high-side load management in harsh environments.

Technical Context

The VNB35N07-E integrates a vertical power MOSFET stage with on-chip protection circuitry including a voltage-clamped drain-source path (V_CLAMP = 70 V), linear current limiter (I_LIM = 35 A), and junction temperature sensing (T_JSH = 150 °C). Its input pin serves dual roles: gate drive interface during normal operation and fault-sink output (R_EQ ≈ 100 Ω) during thermal or short-circuit events.

It features an internal ESD protection structure (HBM: 2000 V), reverse diode with V_SD = 1.6 V at 18 A, and dynamic parameters optimized for inductive loads - including t_r = 350 ns (R_GEN = 10 Ω) and (di/dt)_ON = 60 A/µs - enabling reliable switching in automotive and industrial DC-DC and motor-control subsystems.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab), also available in D2PAK (TO-263) and ISOWATT220 variants. The VNB35N07-E variant uses PowerSO-10 per ST's official ordering information and mechanical drawing P011P6/C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected power switch applications.

Compared with STSPIN840 and IPS1025H, the VNB35N07-E uniquely balances high current (35 A), low R_DS(on) (0.028 Ω), and full 70 V clamping - making it optimal for demanding 12–24 V high-side switching where energy handling and fault resilience are prioritized over integration density.

Availability

VNB35N07-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and off-board battery management systems requiring stable component supply, long lifecycle support, and AEC-Q100-aligned ruggedness.

Supply support for VNB35N07-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog devices for automotive, industrial, and consumer markets.

The VNB35N07-E belongs to ST's OMNIFET™ family of protected high-side switches, engineered specifically for replacing discrete MOSFETs + protection circuits in harsh-environment DC load control - emphasizing reliability, diagnostic capability, and simplified system design.

FAQ

What is the maximum operating frequency of the VNB35N07-E?

The VNB35N07-E is rated for DC to 50 kHz operation per ST's official datasheet. Its switching times - including t_r = 350 ns and t_f = 200 ns with R_GEN = 10 Ω - support efficient PWM control in this range. Higher frequencies increase switching losses and require careful thermal design due to limited R_thj-case (1 °C/W in D2PAK).

Can the VNB35N07-E be used in low-side configuration?

No - the VNB35N07-E is designed exclusively as a high-side switch. Its internal architecture ties the source terminals to ground reference and routes the load between battery and drain. Attempting low-side use violates the pinout and disables protection circuitry, risking permanent damage.

How does the diagnostic feedback function during a fault?

During overtemperature or short-circuit fault, the internal protection circuit disconnects the input pin from the gate and pulls it to ground through a ~100 Ω resistor. This results in a near-0 V signal detectable by any MCU GPIO, enabling immediate software response without additional sensing components.

Is external heat sinking required for continuous 35 A operation?

Yes - at 35 A and R_DS(on) = 0.028 Ω, conduction loss is ~34.3 W. Even with R_thj-case = 1 °C/W (D2PAK), junction temperature exceeds safe limits without substantial heatsinking. ST recommends forced-air cooling or >100 cm² copper pour for sustained 35 A loads.