STMicroelectronics VNB35NV04

Overview

VNB35NV04 from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in the OMNIFET II family, designed for DC–25 kHz switching in industrial and automotive load control. It features 10 mΩ R_DS(on) at 25°C, 30 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 150–200°C, and diagnostic feedback via the input pin. Used as a high-side switch in motor drivers and solenoid controls.

For engineers reviewing the VNB35NV04 datasheet, VNB35NV04 pinout, VNB35NV04 application, or VNB35NV04 equivalent, this page delivers verified electrical specs, validated protection behavior, confirmed PowerSO-10™ package mapping, and real-world fault-handling design implications - all derived from ST's official 2003 datasheet and mechanical outlines.

Technical Context

The VNB35NV04 integrates gate control, linear current limiting, overtemperature sensing, and drain-source clamping into a single VIPower M0-3 process die. Its input pin directly drives the internal power MOSFET gate while sourcing only 100 µA during normal operation and sinking up to 20 mA during fault conditions.

Protection functions operate independently of input drive: current limiting activates at 30–60 A (depending on T_j), thermal shutdown triggers between 150–200°C, and the clamp engages at ~45 V with 1.7 J avalanche energy rating. The device supports analog driving and TTL-level compatibility without external components.

Key Specifications

Pinout & Package

Package: PowerSO-10™ (10-lead exposed-pad surface-mount), outline per ST document P013P. Thermal pad electrically connected to DRAIN pins for optimal heat transfer and EMI control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with VNB35NV04, STSPIN250 trades power capability for digital configurability, while IPS1025H offers identical packaging and protection but with higher conduction loss and superior ESD tolerance - making it suitable for noise-prone factory-floor deployments.

Availability

VNB35NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and medical infusion pump designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for VNB35NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

VNB35NV04 belongs to the OMNIFET II protected Power MOSFET product line, engineered for ruggedized high-side switching in harsh environments - replacing discrete MOSFETs plus protection circuitry in 12–48 V DC systems.

FAQ

What is the maximum continuous drain current for VNB35NV04?

The device features a linear current limit of 30 A typical (45 A max) under V_IN=6 V and V_DS=13 V conditions. Continuous operation at this level requires adequate heatsinking - the PowerSO-10™ package delivers 1.0 °C/W junction-to-case thermal resistance, enabling 125 W dissipation at T_c=25°C.

How does the diagnostic feedback on the INPUT pin work during fault conditions?

When junction temperature exceeds T_jsh (150–200°C), the device actively sinks 10–20 mA through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the pin near 0 V; if driven high-impedance, the pin voltage collapses - both states provide unambiguous fault detection without external circuitry.

Can VNB35NV04 be used in linear (analog) mode, and what limits its safe operating area?

Yes - direct gate access enables analog driving. Safe operation requires limiting power dissipation using the SOA curve: at 25°C case temperature, max V_DS × I_D must stay below 125 W. Derating is necessary above 25°C; the thermal shutdown threshold ensures hard limiting beyond safe boundaries.

Is external clamping needed when driving inductive loads?

No - the integrated 40–55 V drain-source clamp and 1.7 J avalanche energy rating eliminate the need for external TVS diodes in most 12–24 V inductive applications. This is validated per ST's unclamped inductive test circuit (Fig. 3) with L=24 mH and V_DD=24 V.