STMicroelectronics VNB35NV0413TR

Overview

VNB35NV04 from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in the OMNIFET II family, designed for DC–25 kHz switching in automotive and industrial load control. It features 10 mΩ R_DS(on) at 25°C, 30 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 150–200°C, and diagnostic feedback via the input pin. Used as a high-side switch in motor driver stages and solenoid control circuits.

For engineers reviewing the VNB35NV04 datasheet, VNB35NV04 pinout, VNB35NV04 application, or VNB35NV04 equivalent, this device serves as a rugged, self-protected replacement for standard N-channel power MOSFETs in harsh environments-especially where inductive load handling, fault diagnostics, and board-level reliability are critical.

Technical Context

The VNB35NV04 integrates gate control, linear current limiting, overtemperature sensing, and drain-source clamping into a single VIPower M0-3 silicon die. Its input pin directly drives the internal power MOSFET gate while sourcing only 100–150 µA during normal operation.

Fault detection occurs through input-pin voltage collapse (during overtemperature) or controlled sink current (I_gf = 10–20 mA), enabling simple microcontroller monitoring without external sensors. Protection triggers independently of input drive strength and remains active across –40°C to +150°C junction temperature range.

Key Specifications

Pinout & Package

Package: PowerSO-10™ surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1–3 and 5–9 are SOURCE terminals; Pin 4 is DRAIN; Pins 10 and 11 are INPUT.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switching applications.

Compared with VNB35NV04, STSPIN32F0B adds embedded intelligence but increases design complexity and cost, while IPS1021H improves power efficiency and fault margin but removes analog gate access-making VNB35NV04 uniquely suitable for mixed-signal, linear-mode, and legacy-compatible designs.

Availability

VNB35NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, smart lighting ballasts, and EV auxiliary power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for VNB35NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with vertical manufacturing capabilities and broad portfolio spanning automotive, industrial, and power management ICs.

VNB35NV04 belongs to the OMNIFET II family of VIPower devices, engineered specifically for robust, self-protected high-side switching in harsh-environment applications where reliability, integration, and diagnostic capability are mandatory.

FAQ

What is the maximum continuous drain current for VNB35NV04?

The device features an internally limited linear current threshold of 30 A minimum (45 A typical, 60 A maximum) at V_IN = 6 V and V_DS = 13 V. This is not a pulsed rating-it applies continuously during overload, with thermal shutdown engaging if junction temperature exceeds 150–200°C. Actual sustained current depends on PCB copper area and heatsinking per the 1.0 °C/W R_thj-case spec.

Can VNB35NV04 be driven directly by a microcontroller GPIO?

Yes. The input pin draws only 100–150 µA at 5 V, making it compatible with standard CMOS/TTL outputs without buffer stages. It accepts logic-high thresholds from 0.5 V to 2.5 V and tolerates input voltages up to its internally clamped limit. Diagnostic feedback (fault sinking) also operates within standard GPIO voltage/current limits.

How does the overvoltage clamp function during inductive turn-off?

When V_DS rises above ~36 V (clamp threshold), the internal clamp activates and holds V_DS between 40 V and 55 V, dissipating excess energy in the silicon. This eliminates external snubbers for loads like solenoids or relays, and the 1.7 J single-pulse avalanche rating ensures survivability across repeated inductive switching events.

Is VNB35NV04 pin-compatible with other OMNIFET II variants?

No. VNB35NV04 uses the PowerSO-10™ package, while VNP35NV04 (TO-220), VNV35NV04 (PowerSO-10™), and VNW35NV04 (TO-247) share electrical specs but differ in mechanical form factor and thermal resistance. Only VNV35NV04 shares identical pinout and footprint; others require PCB redesign and thermal layout changes.