STMicroelectronics VNB35NV04TR-E

Overview

VNB35NV04TR-E from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in VIPower® M0-3 technology, designed as a smart high-side switch for DC–25 kHz load control. It features 10 mΩ R_DS(on) at 15 A/25 °C, 30 A linear current limit, integrated overvoltage clamp (45 V typ), thermal shutdown (170 °C), and diagnostic feedback via the INPUT pin. Used in automotive body electronics, industrial motor drivers, and solid-state relay replacements.

For engineers reviewing the VNB35NV04TR-E datasheet, VNB35NV04TR-E pinout, VNB35NV04TR-E application, or VNB35NV04TR-E equivalent, key selection criteria include its linear current limiting behavior, gate-diagnostic feedback capability, D2PAK package thermal resistance (1 °C/W), avalanche energy rating (1.7 J), and compatibility with TTL-level input drive.

Technical Context

This OMNIFET II device integrates a vertical Power MOSFET with on-chip protection circuitry including a voltage-controlled linear current limiter, thermal sensing with hysteresis-based restart (170 °C shutdown / 135 °C reset), and an internal overvoltage clamp tied to the drain-source path. The INPUT pin serves dual roles: gate control input and fault-sink output during overtemperature events.

Its protection architecture operates independently of input voltage-current limiting activates at fixed I_lim (30–60 A), thermal shutdown triggers at junction temperature (not case), and clamp voltage remains stable across temperature. The device supports analog gate driving and delivers diagnostic current (10–20 mA) into the INPUT pin under fault conditions when driven from low-impedance sources.

Key Specifications

Pinout & Package

The VNB35NV04TR-E is housed in a surface-mount D2PAK (TO-263) package with 3 terminals: INPUT (pin 1), SOURCE (pins 2–3), and DRAIN (pins 4–10). The multi-pin SOURCE and DRAIN configuration reduces parasitic inductance and improves thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN32F0A and VND5E025AKTR-E, the VNB35NV04TR-E uniquely combines analog gate drive, 45 V clamp robustness, and linear current limiting in a single D2PAK device-making it optimal for 24 V industrial switching where simplicity, ruggedness, and analog control coexist.

Availability

VNB35NV04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, solid-state relay replacements, and heating element controllers requiring stable component supply across extended production lifecycles.

Supply support for VNB35NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive-grade analog devices.

The OMNIFET II product line delivers intelligent Power MOSFETs with integrated protection for harsh-environment switching-designed specifically for automotive, industrial, and appliance applications demanding reliability without external protection circuitry.

FAQ

What is the maximum continuous drain current for VNB35NV04TR-E?

The device features a linear current limit of 30–60 A depending on junction temperature and operating conditions. At T_j = 25 °C, the typical limit is 45 A; it derates to 30 A at 150 °C. This is not a pulsed rating-it is the sustained current the device actively regulates and survives without damage, provided thermal limits are observed.

Can VNB35NV04TR-E be used in linear (analog) mode?

Yes-the datasheet explicitly states "direct access to the gate" and characterizes R_DS(on) vs. input voltage (Fig. 12–13). Input voltage can be varied from 0.5 V to 6 V to achieve proportional current control, enabling soft-start, dimming, and thermal-limited biasing without external op-amps or DACs.

How does the diagnostic feedback function work during thermal fault?

When junction temperature exceeds T_jsh (150–200 °C), the device sinks 10–20 mA through the INPUT pin. If driven by a low-impedance source (e.g., microcontroller GPIO), this pulls the input voltage low-detectable as a logic-low fault flag. With high-impedance drive, the INPUT pin falls to 0 V, but normal operation resumes automatically after cooldown to T_jrs (135 °C).

Is external heatsinking required for full-load operation?

Yes-while R_thj-case is only 1 °C/W, the device dissipates up to 125 W at T_c = 25 °C. For continuous 30 A operation at ambient >50 °C, a heatsink maintaining T_c ≤ 75 °C is mandatory. The D2PAK's exposed drain pad must be soldered to ≥50 mm² of 35 μm copper for rated performance per ST's layout guidelines.