STMicroelectronics VNB49N0413TR

Overview

VNB49N0413TR from STMicroelectronics is a fully autoprotected high-side Power MOSFET in TO-263 (D2PAK) package, integrating linear current limiting (49 A), thermal shutdown (150 °C), and 42 V overvoltage clamp. It replaces standard N-channel MOSFETs in DC–50 kHz switching applications such as motor control, power supplies, and industrial load driving where fault resilience is critical.

For engineers reviewing the VNB49N0413TR datasheet, VNB49N0413TR pinout, VNB49N0413TR application, or VNB49N0413TR equivalent, this device offers diagnostic feedback via input pin voltage monitoring, direct gate access for analog driving, and rugged unclamped inductive energy handling (4 J) - key considerations for robust high-current switching design.

Technical Context

The VNB49N0413TR implements ST's VIPower™ M0 monolithic technology, embedding protection logic, current-sensing circuitry, and thermal sensing directly on-die with the power stage. Its linear current limiter operates independently of input voltage, maintaining ID ≤ 49 A across VIN = 5–10 V while forcing operation in the linear region during overload.

Fault detection relies on junction temperature sensing near the power MOSFET die, triggering shutdown at ≥150 °C and automatic restart at ≤135 °C. During overtemperature fault, the input pin is actively pulled to ground via ~100 Ω, enabling simple microcontroller-level fault detection without external components.

Key Specifications

Pinout & Package

TO-263 (D2PAK) package with exposed drain tab for thermal and electrical connection; 3-pin configuration (Input, Drain, Source) with integrated gate driver and protection logic.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VNB49N0413TR, STSPIN840 targets precision multi-axis motion rather than high-current DC switching, while IPS1021H trades current capacity for smaller package size - making VNB49N0413TR the sole option for 49 A protected high-side switching in TO-263.

Availability

VNB49N0413TR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, DC-DC power conversion, and resistive heating applications requiring stable component supply and long-term lifecycle support.

Supply support for VNB49N0413TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing and broad IP portfolio.

VNB49N0413TR belongs to the OMNIFET family of autoprotected Power MOSFETs, designed specifically for high-reliability DC–50 kHz switching in harsh environments where overcurrent, overtemperature, and inductive transients are routine.

FAQ

Is VNB49N0413TR a high-side or low-side switch?

VNB49N0413TR is a high-side switch with INPUT, DRAIN, and SOURCE terminals configured for load connection between DRAIN and positive rail. Its internal architecture and diagnostic feedback via INPUT pin are optimized for high-side placement, eliminating the need for level-shifting gate drivers in grounded-load configurations.

Can it be driven directly by a microcontroller GPIO?

Yes - VNB49N0413TR accepts 0–18 V logic input and draws only 250–550 µA from the INPUT pin, allowing direct drive from 3.3 V or 5 V MCU GPIOs. No external gate resistor or level shifter is required, though a series resistor (≤100 Ω) is recommended for EMI suppression and ringing control.

What happens during an overtemperature fault?

When junction temperature reaches ≥150 °C, the device shuts down by disconnecting the INPUT pin from the internal gate and pulling it to ground via ~100 Ω. The output turns off, and the device automatically recovers when temperature falls to ≤135 °C - providing self-resetting thermal protection without external intervention.

Does it require an external freewheeling diode?

No - VNB49N0413TR integrates a source-drain diode with 250 ns reverse recovery time and 910 nC Q_rr, rated for 25 A forward current. This internal diode supports freewheeling in inductive loads, eliminating the need for discrete external diodes in most DC–50 kHz applications.