STMicroelectronics VNB49N04TR-E

Overview

VNB49N04TR-E from STMicroelectronics is a fully autoprotected monolithic power MOSFET in the OMNIFET family, fabricated in VIPower M0 technology. It delivers 49 A current limiting, 20 mΩ R_DS(on) at V_IN = 10 V, and 42 V integrated overvoltage clamp - designed as a rugged, drop-in replacement for standard power MOSFETs in DC–50 kHz switching loads such as motor drivers and solenoid controls.

For engineers reviewing the VNB49N04TR-E datasheet, VNB49N04TR-E pinout, VNB49N04TR-E application, or VNB49N04TR-E equivalent, this device offers diagnostic feedback via input pin voltage monitoring, linear current limiting with step-response timing, thermal shutdown at 150 °C, and direct gate access for analog driving - critical for industrial load control and fault-tolerant power switching designs.

Technical Context

The VNB49N04TR-E integrates protection logic directly into the power stage: overvoltage clamping activates at 42 V (typ), linear current limiting holds I_D to 49 A (V_IN = 10 V), and thermal shutdown triggers at T_j ≥ 150 °C with automatic reset at 135 °C. Fault status is signaled by pulling the INPUT pin to ground through a 100 Ω internal resistor.

It operates as a single-channel high-side switch with TTL-compatible input drive, supporting direct analog gate control. Its built-in freewheeling diode exhibits V_SD = 1.8 V at 25 A and t_rr = 250 ns, enabling efficient inductive load commutation without external flyback components.

Key Specifications

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, thermally enhanced with exposed drain pad. Thermal resistance R_thj-case = 1 °C/W enables high-power operation with minimal heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with STSPIN250 and IPS1021H, the VNB49N04TR-E uniquely combines 49 A current limit, 20 mΩ on-resistance, and full diagnostic feedback in a single D2PAK package - making it optimal for high-power, fault-aware DC load switching where both performance and protection integrity are non-negotiable.

Availability

VNB49N04TR-E is available at Aetrix Electronics and suitable for industrial motor control, solenoid actuation, automotive HVAC blower regulation, and DC power distribution units requiring stable component supply across extended production lifecycles.

Supply support for VNB49N04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

The OMNIFET product line was developed to replace discrete MOSFETs and protection circuits in harsh-environment DC switching applications - delivering integrated safety, diagnostics, and ruggedness in monolithic VIPower technology.

FAQ

What is the maximum continuous drain current for VNB49N04TR-E?

The device features internally limited drain current: 49 A at V_IN = 10 V and 28 A at V_IN = 5 V. Actual sustainable current depends on PCB thermal design - with R_thj-case = 1 °C/W, junction temperature must remain below 150 °C to avoid thermal shutdown. Derating applies above T_c = 25 °C per the datasheet derating curve.

How does the diagnostic feedback mechanism work?

During overtemperature or short-circuit fault, the internal protection circuit disconnects the INPUT pin from the gate and connects it to ground via a 100 Ω resistor. This pulls the pin voltage near 0 V, detectable by any microcontroller GPIO. Normal operation shows V_IN ≈ applied control voltage; fault state shows V_IN < 0.5 V with typical sink current of 20–50 mA.

Can VNB49N04TR-E be used in linear (analog) mode?

Yes - the datasheet explicitly states "direct access to the gate of the power MOSFET (analog driving)" and characterizes g_fs = 25–30 S. Linear operation is supported for controlled current ramping, but power dissipation must be managed: in linear mode, P_D = V_DS × I_D, and thermal shutdown will activate if junction temperature exceeds 150 °C.

What is the purpose of the integrated freewheeling diode?

The intrinsic body diode is rated for 25 A forward current (V_SD = 1.8 V) and 250 ns reverse recovery time. It enables safe commutation of inductive loads (e.g., motors, solenoids) without external flyback diodes - reducing component count and layout complexity while maintaining fast turn-off behavior.