STMicroelectronics VND10N0613TR

Overview

VND10N0613TR from STMicroelectronics is a monolithic OMNIFET™ fully autoprotected Power MOSFET in DPAK (TO-252) package, designed for DC–50 kHz switching in industrial and automotive power control applications. It features integrated linear current limitation (10 A typ), thermal shutdown (150 °C), 60 V drain-source clamp, and logic-level input threshold (3.2 V high, 1.5 V low). Its 0.3 Ω R_DS(on) at 7 V gate drive enables efficient load switching in motor drivers and solenoid controls.

For engineers reviewing the VND10N0613TR datasheet, VND10N0613TR pinout, VND10N0613TR application, or VND10N0613TR equivalent, key selection criteria include its built-in short-circuit protection, Schmitt-trigger input for noise immunity, ESD rating (4 kV), and thermal derating behavior under sustained current-limit operation.

Technical Context

The device integrates a VIPower M0-2 process-based vertical Power MOSFET with on-chip protection circuitry including active current limiting, overtemperature shutdown (T_jsh = 150 °C), and an internal Zener clamp between drain and gate to suppress unclamped inductive kickback. Input is driven by a Schmitt-trigger buffer enabling robust logic-level compatibility.

During overload, it enters linear regulation mode-limiting I_D to ~10 A regardless of gate voltage-while dissipating power proportional to V_DS × I_lim; prolonged operation triggers thermal shutdown, with automatic restart at T_jrs = 135 °C. Switching performance includes 1.6 µs turn-on delay (R_gen = 1 kΩ) and 13 nC total input charge.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per Figure 28 and Table 10 (A = 2.4 mm, D = 6.2 mm, E = 6.6 mm, H = 9.7 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with VND10N0613TR, STSPIN250 offers higher precision current control but demands external clamping for inductive safety, while VND5E025AK trades current capacity and voltage headroom for miniaturization-making VND10N0613TR optimal for mid-power 10 A industrial switching where integrated clamp and thermal autonomy are critical.

Availability

VND10N0613TR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable logic outputs, and PLC digital output modules requiring stable component supply across extended production lifecycles.

Supply support for VND10N0613TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with broad manufacturing and quality infrastructure.

VND10N0613TR belongs to the OMNIFET™ family of autoprotected Power MOSFETs, engineered for robustness in harsh environments-specifically targeting replacement of discrete MOSFET+protection circuits in DC–50 kHz industrial and transportation power switches.

FAQ

What is the maximum continuous drain current for VND10N0613TR under standard PCB cooling?

At T_c = 25 °C with adequate copper pour, the device supports 10 A continuous drain current limited by its 35 W P_tot rating and 3.5 °C/W R_thj-case. Derating begins above 25 °C case temperature per Figure 10; at 80 °C case, max continuous current drops to ~6.5 A to maintain T_j ≤ 150 °C.

Does VND10N0613TR require an external flyback diode when driving inductive loads?

No. The integrated drain-source Zener clamp (V_CLAMP = 60 V) actively suppresses inductive kickback during turn-off, eliminating the need for an external freewheeling diode in most 12–24 V applications. This is confirmed in Section 3 ("Protection features") and Figure 5 test circuits.

How does the current-limit feature behave under varying junction temperatures?

I_lim decreases linearly with rising T_j: from 10 A at 25 °C to ~6 A at 125 °C (per Figure 12). This thermal foldback prevents thermal runaway during sustained overload, ensuring safe operation even if heatsinking is marginal.

Can VND10N0613TR be used in high-noise factory floor environments?

Yes. Its Schmitt-trigger input provides >1.7 V hysteresis and 4 kV HBM ESD protection, while the VIPower architecture inherently rejects fast transients. Measured noise immunity exceeds 1 kV peak per µs dV/dt (Section 3), making it suitable for proximity to contactors and variable-frequency drives.