STMicroelectronics VND14NV0413TR

Overview

VND14NV0413TR from STMicroelectronics is a monolithic VIPower™ M0-based protected Power MOSFET in TO-251 (IPAK) package, functioning as a smart high-side switch with integrated linear current limiting (12 A typ.), thermal shutdown (170 °C typical), and 40 V drain-source clamp. It replaces standard MOSFETs in DC–50 kHz inductive load control for automotive body electronics and industrial solenoid drivers.

For engineers reviewing the VND14NV0413TR datasheet, VND14NV0413TR pinout, VND14NV0413TR application, or VND14NV0413TR equivalent, key selection criteria include its diagnostic feedback via input pin, direct gate access for analog driving, ESD robustness (4 kV HBM), and built-in short-circuit protection without external sensing components.

Technical Context

The device integrates a power MOSFET stage with on-chip protection logic that monitors junction temperature and drain current in real time. Its linear current limiter activates at ~12 A (VIN = 5 V), forcing operation in the linear region to limit energy dissipation during overload - distinct from simple foldback or trip-and-hold behavior.

Thermal shutdown triggers between 150–200 °C (typ. 170 °C), with automatic restart after ~15 °C hysteresis. Fault status is signaled by sinking 10–20 mA (Igf) through the input pin, enabling detection without additional sense circuitry - a feature enabled by its dedicated low-impedance gate drive path and internal voltage references.

Key Specifications

Pinout & Package

TO-251 (IPAK) package: 3-pin, single-ended vertical mount with exposed drain pad for thermal conduction. Pin 1 = Input (IN), Pin 2 = Source (S), Pin 3 = Drain (D). The exposed drain tab is electrically connected to Pin 3 and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with VND14NV0413TR, VND5T016AKTR-E delivers higher current capacity and thermal robustness but demands more board area; IPS1001H offers smaller footprint and lower static current but sacrifices analog drive flexibility and inductive energy handling.

Availability

VND14NV0413TR is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, and off-board lighting requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for VND14NV0413TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader specializing in power management, automotive ICs, and embedded processing solutions, with manufacturing facilities certified to ISO/TS 16949 and IATF 16949 standards.

VND14NV0413TR belongs to the OMNIFET II family of protected Power MOSFETs, designed specifically for replacing mechanical relays and discrete MOSFET+protection circuits in harsh 12–24 V DC industrial and automotive environments.

FAQ

What is the maximum continuous drain current for VND14NV0413TR?

The device features a linear current limiter set to 12 A (typ.) at V_IN = 5 V and V_DS = 13 V. Continuous operation at this level depends on PCB thermal design: with 1.7 °C/W junction-to-case resistance and adequate copper pour, it sustains ~7 A continuously in TO-251 package at 25 °C ambient. Exceeding thermal limits triggers automatic shutdown.

Can VND14NV0413TR be used with 3.3 V microcontrollers?

Yes - its input threshold voltage ranges from 0.5 V to 2.5 V, ensuring reliable turn-on with 3.3 V logic. The input draws only 100–150 µA, placing negligible load on MCU GPIOs. However, fault feedback (I_gf = 10–20 mA) requires the MCU to either sink that current or detect voltage collapse at the IN pin using a weak pull-up.

Does VND14NV0413TR require an external flyback diode?

No - the integrated 45 V clamp and rugged avalanche capability (E_AS = 400 mJ) eliminate the need for external flyback diodes when switching inductive loads. This is validated per Figure 5 and Figure 6 in ST's Doc ID 7393 Rev 9, covering unclamped inductive switching up to 24 V systems with L ≤ 24 mH.

How does the diagnostic feedback signal work during thermal fault?

When junction temperature exceeds ~170 °C, the device sinks 10–20 mA (I_gf) through the IN pin. If driven by a low-impedance source (e.g., MCU GPIO with 20 mA drive), this pulls the IN voltage near 0 V, signaling fault. With high-impedance drive, the IN pin floats low - detectable as logic-low state, enabling software-triggered shutdown or alert.