STMicroelectronics VND14NV04-1-E

Overview

VND14NV04-1-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected Power MOSFET in SO-8 package, designed as a smart high-side switch for DC–50 kHz load control. It features 35 mΩ R_DS(on), 12 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 150–200 °C, and diagnostic feedback via input pin voltage drop-used in automotive body electronics, industrial PLC outputs, and 12 V/24 V DC power distribution systems.

For engineers reviewing the VND14NV04-1-E datasheet, VND14NV04-1-E pinout, VND14NV04-1-E application, or VND14NV04-1-E equivalent, key selection criteria include its integrated linear current limiting (not just trip-and-shutdown), direct gate access for analog driving, fault-sink diagnostic capability (10–20 mA Igf), and SO-8 thermal performance with R_thj-amb ≤ 90 °C/W on minimal copper.

Technical Context

This device integrates VIPower™ M0 technology to embed protection logic directly into the power stage: linear current limiting operates continuously across the full operating range without latch-off, while thermal shutdown and overvoltage clamping act independently of input drive conditions. The internal clamp activates at 36 V threshold and sustains up to 45 V typical, enabling robust unclamped inductive switching.

Fault detection relies on junction temperature sensing near the power MOSFET die, triggering shutdown between 150–200 °C and automatic restart after ~15 °C hysteresis. Diagnostic feedback is implemented by sinking 10–20 mA (Igf) through the input pin during overtemperature events-compatible with standard TTL logic drivers due to low IISS (100–150 µA) and VINCL clamping (−0.3 to 6.8 V).

Key Specifications

Pinout & Package

SO-8 surface-mount package (ECOPACK® compliant, lead-free); compact footprint suitable for space-constrained PCB layouts in automotive and industrial control modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side smart switch applications.

Compared with STSPIN250 and BTS716G, the VND14NV04-1-E uniquely combines SO-8 packaging, 12 A linear current limiting, and direct Igf-based fault signaling-making it optimal for cost-sensitive, space-constrained designs requiring minimal external components and straightforward MCU integration.

Availability

VND14NV04-1-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and DC power distribution units requiring stable component supply, long-term lifecycle support, and ECOPACK®-compliant sourcing.

Supply support for VND14NV04-1-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and broad automotive qualification coverage.

The OMNIFET II product line delivers intelligent power switches optimized for harsh-environment DC load control-designed specifically for automotive body electronics, industrial automation, and appliance safety-critical power interfaces.

FAQ

What is the maximum continuous drain current for VND14NV04-1-E under typical PCB conditions?

The device supports 12 A continuous drain current (I_lim) with thermal shutdown activation above 150 °C. On a standard FR4 board with 0.5 cm² copper connected to all GND pins, its R_thj-amb is 90 °C/W, allowing ~4.6 W dissipation before reaching T_jsh. At 35 mΩ R_DS(on), this corresponds to ~11.5 A RMS in steady-state operation with adequate airflow or heatsinking.

Can VND14NV04-1-E be used as a low-side switch?

No-it is configured exclusively as a high-side switch with OUT pin as the switched drain output and GND pins tied to source. The internal architecture, diagnostic feedback path, and clamp polarity assume high-side topology. Using it as a low-side switch would disable fault reporting and violate absolute maximum ratings for V_IN and V_CLAMP.

How does the diagnostic feedback (I_gf) function during normal operation versus fault condition?

During normal operation, the IN pin draws only 100–150 µA (II_SS). When thermal shutdown triggers, the device actively sinks 10–20 mA (I_gf) through IN-pulling the pin voltage toward 0 V if driven by high-impedance source, or generating a measurable voltage drop across a series resistor for MCU detection. No action is required from the driver except tolerating this brief current pulse.

Is external gate resistor required for EMI suppression or switching control?

No external gate resistor is needed for basic operation-the internal gate driver is optimized for direct TTL-level drive. However, a 10 Ω series resistor (R_{IN MIN}) is recommended per datasheet Figure 3 to control dV/dt and reduce EMI during fast switching. This value balances turn-on speed and radiated emissions in 12 V/24 V systems with typical cable inductance.