STMicroelectronics VND1NV04

Overview

VND1NV04 from STMicroelectronics is a monolithic OMNIFET II fully autoprotected Power MOSFET in TO-252 (DPAK) package, designed as a rugged replacement for standard N-channel power switches in DC–50 kHz load switching applications. It features 250 mΩ max R_DS(on), 1.7 A typical current limitation, 40 V drain-source clamp voltage, and integrated thermal shutdown - enabling reliable operation in automotive body control modules, industrial PLC outputs, and motor driver protection circuits.

For engineers reviewing the VND1NV04 datasheet, VND1NV04 pinout, VND1NV04 application, or VND1NV04 equivalent, key selection considerations include its linear current limiting behavior under overload, diagnostic feedback via input pin voltage shift, direct gate access for analog driving, and thermal shutdown threshold of 150–200 °C with automatic restart at ~135 °C.

Technical Context

The VND1NV04 integrates a VIPower® M0-3 process-based N-channel vertical power MOSFET with on-chip protection logic, including a voltage-controlled overvoltage clamp (V_CLAMP = 40 V), linear current limiter (I_LIMH = 1.7 A typ), and junction temperature sensor triggering shutdown at T_jsh = 150–200 °C. Its input pin directly drives the internal gate but draws only 100–150 µA supply current (I_ISS).

Protection activation is autonomous: overcurrent forces linear-mode operation until thermal shutdown engages; fault status is signaled by sinking 10–20 mA (I_gf) into the input pin during overtemperature events. The device supports analog driving and operates up to 50 kHz with controlled dI/dt (5 A/µs) and low output capacitance (C_OSS = 90 pF).

Key Specifications

Pinout & Package

TO-252 (DPAK) package: surface-mount, 3-pin, exposed drain pad for thermal dissipation (R_thj-case = 3.5 °C/W). Pin 1 = INPUT, Pin 2 = DRAIN (tab), Pin 3 = SOURCE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with STSPIN250 and VND5E025AK, the VND1NV04 delivers superior single-channel ruggedness (40 V clamp, 55 mJ E_AS) and simpler analog interfacing, making it optimal for cost-sensitive, high-reliability 12–24 V DC load switching where digital communication is unnecessary.

Availability

VND1NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, motor protection circuits, and smart lighting systems requiring stable component supply across long production lifecycles.

Supply support for VND1NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, automotive ICs, and embedded processing solutions with strong IP in ruggedized power technologies.

The VND1NV04 belongs to the OMNIFET II family - engineered specifically for robust, self-protected high-side switching in harsh environments like automotive under-hood and industrial control cabinets, where reliability under electrical and thermal stress is critical.

FAQ

What is the maximum continuous drain current for VND1NV04?

The VND1NV04 does not specify a fixed maximum continuous drain current due to its linear current-limiting architecture. Under normal operation with adequate heatsinking, it sustains 1.7 A continuously (typical I_LIM). At higher ambient temperatures or reduced copper area, derating applies per the 54 °C/W R_thj-amb value - e.g., 0.8 A max at T_a = 85 °C on standard FR4.

Can VND1NV04 be used in high-side or low-side configurations?

VND1NV04 is designed exclusively as a high-side switch: DRAIN connects to the positive rail, SOURCE to the load, and the load returns to ground. Its internal architecture - including diagnostic feedback referenced to INPUT and clamp referenced to SOURCE - makes low-side use unsafe and nonfunctional. Attempting low-side connection risks latch-up and invalidates all protection features.

How is fault condition detected using the INPUT pin?

During overtemperature shutdown, the VND1NV04 sinks 10–20 mA (I_gf) into the INPUT pin. When driven by a 5 V MCU GPIO through a 1 kΩ series resistor, this causes the pin voltage to drop to ~3 V - detectable by ADC or comparator. No external pull-up is needed; the internal sink current provides unambiguous fault signaling without additional components.

Does VND1NV04 require an external freewheeling diode when driving inductive loads?

No external freewheeling diode is required. The integrated 40 V drain-source clamp (V_CLAMP) actively limits inductive kickback voltage during turn-off, and the 55 mJ single-pulse avalanche energy rating ensures safe energy absorption. This eliminates board space, cost, and reliability risk associated with discrete diodes - confirmed in ST's unclamped inductive load test circuit (Figure 6).