STMicroelectronics VND1NV0413TR

Overview

VND1NV0413TR from STMicroelectronics is a monolithic OMNIFET II fully autoprotected high-side Power MOSFET in TO-252 (DPAK) package, designed for DC–50 kHz switching in industrial and automotive load control. It features 250 mΩ R_DS(on), 1.7 A linear current limit, 40 V drain-source clamp, thermal shutdown at 150–200 °C, and diagnostic feedback via input pin - deployed in motor driver output stages and solenoid drivers.

For engineers reviewing the VND1NV0413TR datasheet, VND1NV0413TR pinout, VND1NV0413TR application, or VND1NV0413TR equivalent, this page delivers verified electrical specs, protection behavior under overload/inductive fault, thermal derating curves for DPAK mounting, and real-world design meaning of diagnostic sink current (10–20 mA), linear current limiting, and integrated overvoltage clamp.

Technical Context

The device integrates gate driver, linear current limiter, thermal sensor, and overvoltage clamp into a single VIPower® M0-3 silicon die. Its input pin directly controls the internal MOSFET gate but draws only 100–150 µA supply current - enabling direct microcontroller GPIO drive without external level-shifting or buffering.

Protection logic operates independently of input voltage: current limiting activates at ~1.7 A (typ), thermal shutdown triggers between 150–200 °C, and fault detection sinks 10–20 mA through the input pin when junction temperature exceeds threshold - allowing host MCU to detect failure without additional sensing circuitry.

Key Specifications

Pinout & Package

TO-252 (DPAK) package: surface-mount, 3-pin, exposed drain pad for thermal conduction. Pin 1 = INPUT (gate control/diagnostic), Pin 2 = SOURCE (power return), Pin 3 = DRAIN (switched load connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN250 and VND5E025AKTR-E, the VND1NV0413TR uniquely combines linear current limiting, diagnostic sink feedback, and DPAK thermal performance - making it optimal for cost-sensitive, space-constrained industrial high-side switches requiring both protection and fault visibility.

Availability

VND1NV0413TR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable logic outputs, and solenoid driver designs requiring stable component supply and long-term production continuity.

Supply support for VND1NV0413TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive-grade analog ICs.

The OMNIFET II family targets ruggedized high-side switching in harsh environments - engineered for industrial automation, commercial vehicle systems, and factory equipment where reliability under overload, thermal stress, and inductive transients is non-negotiable.

FAQ

What is the maximum continuous drain current for VND1NV0413TR?

The device does not specify a fixed maximum continuous drain current due to thermal dependence. At T_c = 25 °C with standard FR4 PCB (50 mm² Cu), its 35 W total dissipation supports ~1.7 A continuously before thermal shutdown activates. Actual usable current depends on heatsinking, ambient temperature, and duty cycle - designers must use the derating curve (Figure 11) and R_thj-amb = 54 °C/W to calculate safe operating area.

Can VND1NV0413TR be driven directly from a 3.3 V microcontroller GPIO?

Yes - the input threshold voltage (V_INTH) ranges from 0.5 V (min) to 2.5 V (typ), ensuring reliable turn-on with 3.3 V logic. However, the input draws 100–150 µA supply current, so the GPIO must source that current without droop. No level shifter is needed, but a minimum 330 Ω series resistor is required for ESD protection and to limit fault-sink current during thermal events.

How does the diagnostic feedback function work during overtemperature?

When junction temperature exceeds T_jsh (150–200 °C), the device actively sinks 10–20 mA through the INPUT pin. If the driving source has low impedance (e.g., MCU GPIO configured as push-pull), this pulls the input voltage down - signaling fault to the controller. The sink current persists until junction temperature falls ~15 °C below shutdown threshold, enabling automatic restart without software intervention.

Is an external freewheeling diode required when driving inductive loads?

No - the integrated 40 V drain-source clamp and 55 mJ avalanche energy rating allow safe unclamped inductive switching (per Figure 6 test circuit). However, for highly repetitive or high-energy inductive loads (e.g., >100 mH at 24 V), adding an external Schottky diode across the load improves efficiency and reduces stress on the internal clamp - especially when operating near thermal limits.