STMicroelectronics VND3NV04-1

Overview

VND3NV04-1 from STMicroelectronics is a monolithic OMNIFET II fully autoprotected N-channel Power MOSFET in TO-251 (IPAK) package, designed for DC to 50 kHz switching in industrial and automotive load control. It features integrated linear current limitation (3.5 A typ), thermal shutdown (170 °C typ), overvoltage clamp (40 V min), R_DS(on) of 120 mΩ at V_IN = 5 V / I_D = 1.5 A, and diagnostic feedback via input pin. Used in motor driver outputs and solenoid drivers where ruggedness against inductive transients is critical.

For engineers reviewing the VND3NV04-1 datasheet, VND3NV04-1 pinout, VND3NV04-1 application, or VND3NV04-1 equivalent, this page delivers verified electrical specs, protection behavior under fault conditions, thermal derating curves, real-world switching performance with 220 Ω gate drive, and validated alternatives for high-reliability 12–24 V DC load switching.

Technical Context

This device integrates VIPower™ M0-3 technology with direct gate access for analog driving, enabling precise linear-mode control while retaining digital on/off capability. Its internal architecture combines a power MOSFET stage with dedicated protection circuitry-including voltage-clamp diode, current-sense amplifier, thermal sensor, and fault-current sink-operating autonomously without external components.

The input pin serves dual roles: gate control signal interface (with 100 µA typical supply current) and fault status indicator (sinking up to 20 mA during thermal shutdown). Protection activation is independent of input voltage, relying solely on junction temperature and drain current sensing within the power die.

Key Specifications

Pinout & Package

TO-251 (IPAK) package: three-terminal surface-mount variant with exposed drain tab for thermal and electrical connection; pin 1 = INPUT, pin 2 = DRAIN (tab), pin 3 = SOURCE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected N-channel power switch applications.

Compared with STP3NK60ZFP, VND3NV04-1 reduces BOM count and improves field reliability via monolithic protection; compared with VND5N07TR-E, it delivers superior thermal handling (35 W vs. 12 W) and higher avalanche robustness for 24 V industrial environments.

Availability

VND3NV04-1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and DC motor control systems requiring stable component supply, long-term lifecycle support, and compliance with ECOPACK® environmental standards.

Supply support for VND3NV04-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

The OMNIFET II product line targets high-reliability load switching in harsh environments, integrating protection functions directly into VIPower™ smart-power technology to replace discrete MOSFET + protection circuits.

FAQ

What is the maximum continuous drain current for VND3NV04-1?

The device limits continuous drain current to 3.5 A typical under normal operating conditions (V_IN = 5 V, V_DS = 13 V). This is enforced by an internal linear current limiter-not a fuse-and remains active across temperature. Sustained operation at I_lim requires thermal design supporting 35 W dissipation at the case, as specified in Table 3 (R_thj-case = 3.5 °C/W).

Can VND3NV04-1 be used in high-side configuration?

No-VND3NV04-1 is optimized as a low-side switch with source tied to ground. Its internal protection circuitry references source potential for current sensing and thermal detection. High-side use would disable fault detection and violate absolute maximum ratings for input-to-source voltage. For high-side applications, ST offers complementary devices like VNQ5E050AKTR-E.

How does the diagnostic feedback function during thermal shutdown?

When junction temperature exceeds T_jsh (150–200 °C), the device sinks 10–20 mA (I_gf) through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the input voltage toward 0 V, signaling fault. If driven by high impedance, the pin floats low-still detectable as logic-low-without affecting restart behavior after cooldown.

Is external gate resistor required for EMI control?

Yes-a minimum 220 Ω series resistor (R_IN) is mandatory per Table 2 to limit input current to ±20 mA and ensure stable switching. Values between 220 Ω and 2.2 kΩ allow tuning of dI/dt (4.7 A/µs to 0.3 A/µs) and dv/dt (300 V/µs to 30 V/µs), directly impacting conducted EMI and voltage overshoot in inductive loads.