STMicroelectronics VND3NV04-1-E

Overview

VND3NV04-1-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected N-channel Power MOSFET in TO-251 (IPAK) package, designed for DC to 50 kHz switching in industrial and automotive load control. It features integrated linear current limitation (3.5 A typ), thermal shutdown (170 °C typ), 40 V drain-source clamp, 120 mΩ R_DS(on) at V_IN = 5 V, and diagnostic feedback via input pin - used in motor driver output stages and solenoid drivers requiring fault resilience.

For engineers reviewing the VND3NV04-1-E datasheet, VND3NV04-1-E pinout, VND3NV04-1-E application, or VND3NV04-1-E equivalent, this page delivers verified electrical specs, protection behavior under short-circuit/overtemperature, thermal derating curves, gate drive compatibility with TTL logic, and real-world use cases in harsh-environment load switching.

Technical Context

This device implements ST's VIPower™ M0-3 technology, embedding gate driver, protection logic, and power stage in one die. Its linear current limiter operates independently of input voltage, clamping drain current at 3.5–7 A depending on junction temperature, while overvoltage clamp activates at 40–55 V to suppress inductive kickback.

Fault detection is implemented through sink current (10–20 mA) on the input pin during thermal shutdown, enabling direct interface with microcontroller GPIOs without external sensing circuitry. The integrated source-drain diode (V_SD = 0.8 V @ 1.5 A) supports freewheeling in inductive loads, and ESD robustness exceeds 4 kV HBM and 16.5 kV output-pin-only.

Key Specifications

Pinout & Package

TO-251 (IPAK) package: three-terminal surface-mount variant with isolated tab (drain-connected), optimized for high-power density and thermal performance on PCBs with limited heatsink area. Thermal resistance junction-to-case is 3.5 °C/W max.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected power switch applications.

Compared with STP3NK60ZFP, VND3NV04-1-E reduces design complexity by integrating protection and diagnostics; compared with VND5E025AKTR-E, it trades lower R_DS(on) for higher voltage rating and IPAK thermal performance - making it optimal for 12–24 V industrial actuators demanding ruggedness over miniaturization.

Availability

VND3NV04-1-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output modules, and HVAC motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VND3NV04-1-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

VND3NV04-1-E belongs to the OMNIFET II family of protected Power MOSFETs, engineered for replacement of standard discrete switches in harsh-environment load control applications where reliability, fault resilience, and system-level simplification are critical.

FAQ

Can VND3NV04-1-E be driven directly by a 3.3 V microcontroller GPIO?

Yes - its input threshold voltage (V_INTH) ranges from 0.5 V to 2.5 V, and it draws only 100–150 µA at 5 V input. At 3.3 V, the device remains fully enhanced with R_DS(on) increasing to ~240 mΩ (per Table 4), which is acceptable for ≤1 A loads. No level-shifting circuitry is required.

What is the maximum continuous drain current at 85 °C ambient temperature?

Based on thermal data (R_thj-amb = 100 °C/W for TO-251 on FR4), junction temperature rise at 1.5 A is ~150 °C - exceeding safe limits. Derating curves (Figure 11) show maximum continuous I_D drops to ~1.1 A at T_c = 85 °C. For sustained 2 A operation, forced air cooling or larger copper area is mandatory.

How does the diagnostic feedback function during overtemperature fault?

When junction temperature reaches T_jsh (150–200 °C), the device sinks 10–20 mA through the input pin. If driven by a low-impedance source (e.g., MCU GPIO with 20 mA drive), the input voltage drops to ~0.4 V, signaling fault. If driven by high-impedance source, the pin falls to 0 V - still detectable as logic-low by most controllers.

Is the source-drain diode suitable for freewheeling in PWM-driven inductive loads?

Yes - the integrated body diode has V_SD = 0.8 V @ 1.5 A and t_rr = 107 ns, enabling efficient freewheeling in 50 kHz PWM applications. Its reverse recovery charge (Q_rr = 37 µC) is low enough to minimize switching losses and voltage overshoot when paired with proper gate drive impedance (220 Ω recommended).