STMicroelectronics VND3NV04-E

Overview

VND3NV04-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected N-channel Power MOSFET in TO-252 (DPAK) package, designed for DC–50 kHz switching in industrial and automotive load control. It features 120 mΩ R_DS(on) at V_IN = 5 V, 3.5 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 170 °C, and diagnostic feedback via input pin. Used in motor driver outputs and solenoid drivers where ruggedness against inductive kickback and fault detection are critical.

For engineers reviewing the VND3NV04-E datasheet, VND3NV04-E pinout, VND3NV04-E application, or VND3NV04-E equivalent, key selection criteria include its integrated linear current limiter response time (10 µs), fault-sink capability (15 mA), junction-to-case thermal resistance (3.5 °C/W), and compatibility with TTL-level drive without external gate resistors.

Technical Context

The device integrates a VIPower™ M0-3 process Power MOSFET with on-chip protection circuitry including a voltage-controlled linear current limiter, thermal shutdown sensor located in the power stage, and an overvoltage clamp triggered at 36 V (typ.) with 45 V clamping voltage. Its gate is directly accessible for analog driving, enabling precise current regulation independent of input logic level.

Protection activation is autonomous: overtemperature shutdown occurs between 150–200 °C (typ. 170 °C), with automatic restart after ~15 °C hysteresis; short-circuit detection relies on junction temperature sensing-not input voltage-ensuring robust operation under varying drive conditions. Fault status is signaled by sinking up to 20 mA through the input pin when T_j exceeds shutdown threshold.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = INPUT, Pin 2 = DRAIN (tab-connected), Pin 3 = SOURCE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected Power MOSFET applications.

Compared with STP36NF06L, VND3NV04-E trades lower R_DS(on) for integrated protection and simpler drive; versus VND5E025AKTR-E, it offers faster switching and lower cost but lacks digital configurability and higher current capability.

Availability

VND3NV04-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, smart lighting systems, and PLC output modules requiring stable component supply with long-term manufacturing continuity.

Supply support for VND3NV04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

VND3NV04-E belongs to the OMNIFET II family of autoprotected Power MOSFETs, engineered for robust load switching in harsh environments where reliability, fault resilience, and design simplification are prioritized over ultra-low R_DS(on).

FAQ

What is the recommended gate drive configuration for VND3NV04-E?

Drive Pin 1 (INPUT) directly with a 0–5 V TTL signal; no external gate resistor is required for basic switching. For EMI-sensitive applications, a 220 Ω series resistor limits dI/dt. The device draws only 150 µA quiescent current, enabling direct MCU GPIO connection without level-shifting.

Can VND3NV04-E be used in high-side configuration?

Yes - VND3NV04-E is optimized for high-side switching. Its INPUT pin controls the internal gate, and the DRAIN (Pin 2) connects to the positive rail. The SOURCE (Pin 3) serves as the switched output, allowing direct connection to grounded loads without floating supply requirements.

How does the diagnostic feedback function during thermal fault?

When junction temperature exceeds 170 °C, the device sinks 10–20 mA through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the input voltage toward 0 V, triggering an interrupt. No additional circuitry is needed to detect the fault condition.

What is the maximum continuous current VND3NV04-E can deliver in TO-252 package?

At T_c = 25 °C with adequate PCB copper (50 mm², 35 µm thick), the device delivers 35 W continuous power, corresponding to ~7.5 A at 4.7 V drop (R_DS(on)-limited). However, the linear current limiter caps steady-state current at 3.5 A unless operated in pulsed mode with strict duty-cycle derating.