STMicroelectronics VND3NV04TR-E

Overview

VND3NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected N-channel Power MOSFET in TO-252 (DPAK) package, designed for DC–50 kHz switching in industrial and automotive load control. It features 120 mΩ R_DS(on) at V_IN = 5 V, 3.5 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 170 °C, and diagnostic feedback via input pin. Used in motor driver outputs, solenoid drivers, and smart power distribution modules.

For engineers reviewing the VND3NV04TR-E datasheet, VND3NV04TR-E pinout, VND3NV04TR-E application, or VND3NV04TR-E equivalent, key selection criteria include its integrated linear current limiter (I_lim = 3.5 A), fault-sink diagnostic capability (I_gf = 10–20 mA), low input supply current (I_ISS = 100–150 µA), and rugged unclamped avalanche energy rating (E_AS = 100 mJ).

Technical Context

This device integrates a VIPower™ M0-3 process Power MOSFET with on-die protection circuitry including linear current limiting, thermal shutdown (T_jsh = 150–200 °C), and overvoltage clamp (V_CLAMP = 40–55 V). Its input pin directly drives the gate but draws only 100–150 µA quiescent current, enabling TTL-compatible control without external level-shifting.

Protection activation is autonomous: current limiting engages at I_DS ≥ 3.5 A regardless of V_IN, while thermal shutdown triggers independently of input voltage. Fault status is signaled by sinking up to 20 mA through the input pin-enabling real-time diagnostics without additional sensors or circuitry.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad for heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected Power MOSFET applications.

Compared with STSPIN32F0B and IPS1021H, VND3NV04TR-E uniquely combines analog gate access, diagnostic feedback, and linear current limiting in a cost-optimized DPAK package-making it optimal for single-channel, medium-current (≤3.5 A), safety-aware industrial switches requiring minimal external components.

Availability

VND3NV04TR-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and PLC output modules requiring stable component supply across extended production lifecycles.

Supply support for VND3NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

VND3NV04TR-E belongs to the OMNIFET II family of autoprotected Power MOSFETs, engineered specifically for robust, maintenance-free switching in harsh industrial and automotive environments where reliability and diagnostic capability are critical.

FAQ

What is the maximum continuous drain current for VND3NV04TR-E?

The device features a linear current limit of 3.5 A (typical) that activates regardless of input voltage. Continuous operation above this level is not supported-the internal limiter forces linear-mode conduction, increasing power dissipation. For sustained 3.5 A loads, thermal design must ensure junction temperature remains below 150 °C using the DPAK's 3.5 °C/W junction-to-case thermal resistance.

Can VND3NV04TR-E be used in high-side configuration?

Yes, but requires level-shifted gate drive since the INPUT pin references SOURCE. In high-side use, the SOURCE terminal floats at load voltage; therefore, a dedicated high-side driver (e.g., bootstrap or isolated supply) must bias the INPUT pin relative to SOURCE. The device does not integrate level-shifting circuitry-its architecture assumes low-side or externally driven high-side topologies.

How does the diagnostic feedback function during thermal shutdown?

When junction temperature exceeds T_jsh (150–200 °C), the device sinks 10–20 mA through the INPUT pin. If driven by a low-impedance source (e.g., microcontroller GPIO with pull-up), this pulls the input voltage low, signaling fault. If the driver has high impedance, the INPUT pin falls to 0 V-still detectable as a logic-low state without affecting device recovery behavior.

Is external clamping required for inductive loads?

No. The integrated overvoltage clamp (V_CLAMP = 40–55 V) handles typical inductive transients in 12 V/24 V systems. However, for loads generating >55 V spikes (e.g., large solenoids with fast turn-off), an external TVS diode rated above 55 V may be added in parallel for margin. The 100 mJ avalanche rating confirms robustness under unclamped conditions per Figure 6 test circuit.