STMicroelectronics VND5050AKTR-E

Overview

VND5050AKTR-E from STMicroelectronics is a dual-channel high-side driver IC with integrated analog current sense, designed for automotive power distribution and load control. It delivers 18 A typical current limiting per channel, 50 mΩ max on-state resistance at 25°C, and operates across 4.5–36 V supply range-enabling robust control of resistive, inductive, and capacitive loads such as headlights, solenoids, and LED arrays in body electronics modules.

For engineers reviewing the VND5050AKTR-E datasheet, VND5050AKTR-E pinout, VND5050AKTR-E application, or VND5050AKTR-E equivalent, key selection criteria include its PowerSSO-24 package thermal performance, CMOS-compatible 3.0 V logic inputs, proportional current sense accuracy over -40°C to 150°C, and built-in protections against reverse battery, load dump, undervoltage, and thermal runaway.

Technical Context

This device implements two independent VIPower M0-5 high-side switches with active power limitation during inrush and overload. Each channel integrates a precision current-sense amplifier (K₀ = 1270–3450 A/A) with CS_DIS-controlled enable/disable and <±7% full-temperature drift at 1 A output.

Protection architecture includes undervoltage shutdown (V_USD = 4.5 V typ), clamp-limited V_CC up to 41 V, self-limiting thermal transients, and automatic restart after thermal shutdown at 150°C. Diagnostic outputs provide real-time status via proportional I_SENSE and fault indication through dedicated pins.

Key Specifications

Pinout & Package

Delivered in PowerSSO-24 package: 24-pin exposed-pad surface-mount housing with V_CC-tied thermal tab for enhanced heat dissipation in high-power automotive environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side driver applications.

Compared with TPS27082LRTJR and BD7F200GUL, VND5050AKTR-E uniquely combines dual-channel 18 A capability, 50 mΩ R_ON, programmable current sense disable, and automotive-grade transient protection-making it the only option qualified for ASIL-B-compliant body electronics with integrated diagnostics.

Availability

VND5050AKTR-E is available at Aetrix Electronics and suitable for automotive body control units, engine management systems, and electric power steering auxiliary load distribution requiring stable component supply across extended temperature and lifetime requirements.

Supply support for VND5050AKTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with broad IP in smart power technologies.

VND5050AKTR-E belongs to ST's VIPower™ high-side driver family, engineered specifically for automotive power distribution applications demanding high reliability, integrated diagnostics, and AEC-Q100 Grade 0 qualification.

FAQ

What is the maximum allowable PCB copper area for thermal performance in PowerSSO-24?

Per Figure 33, thermal resistance junction-to-ambient (R_thj-amb) drops to 25°C/W with ≥400 mm² of 2-oz copper on top and bottom layers connected via ≥6 thermal vias. This enables 5.2 W continuous power dissipation per channel at 150°C ambient-critical for under-hood placement without forced airflow.

How does the current sense ratio drift affect accuracy at 125°C?

At 1 A output and T_j = 125°C, K₁ drift is ≤+7% (Table 10), meaning I_SENSE = I_OUT/1470 yields ±0.047 A error. Combined with 10 kΩ sense resistor tolerance (±1%) and MCU ADC INL (±2 LSB), total current measurement uncertainty remains within ±5%-sufficient for ASIL-B diagnostic thresholds.

Can CS_DIS be left floating, and what is the default state?

Yes-CS_DIS is internally pulled down; leaving it unconnected defaults to enabled current sense (Table 3). However, for lowest leakage in sleep mode, ST recommends tying CS_DIS to GND via 10 kΩ resistor to ensure firm low state and eliminate noise coupling risks in high-EMI zones.

What protection features activate during reverse battery connection?

When reverse battery is applied, the GND pin must be protected externally (Fig. 26). Internally, the device relies on reverse-battery protection network at GND plus V_F = 0.7 V output-to-V_CC diode (Table 6) to clamp reverse current. No internal protection activates without external diode/resistor-failure occurs if GND network is omitted.