STMicroelectronics VND5N07

Overview

VND5N07 from STMicroelectronics is a monolithic OMNIFET II high-side power switch IC built in VIPower M0 technology, functioning as an autoprotected N-channel enhancement-mode MOSFET for DC–50 kHz switching. It delivers 5 A typical current limiting, 0.2 Ω max R_DS(on) at 10 V_IN, and 70 V drain-source clamp voltage, enabling robust load control in automotive body electronics and industrial PLC outputs.

For engineers reviewing the VND5N07 datasheet, VND5N07 pinout, VND5N07 application, or VND5N07 equivalent, this device supports analog gate driving, diagnostic feedback via input pin voltage monitoring, and direct replacement of discrete power MOSFETs in harsh-inductive environments requiring integrated thermal shutdown, linear current limitation, and avalanche energy handling.

Technical Context

The VND5N07 integrates a power MOSFET with on-chip protection circuitry including a voltage-clamped drain (70 V), linear current limiter (5 A typ), and junction-temperature-sensing thermal shutdown (150 °C trip, 135 °C reset). Its input pin serves dual roles: gate control during normal operation and fault-sink path (100 Ω to GND) during overtemperature events.

It operates as a high-side switch with TTL-compatible input logic, draws only 250–500 µA supply current from the input pin, and features ESD protection (2 kV HBM). The device's internal gate driver enables direct analog driving while maintaining safe operating area under unclamped inductive switching conditions up to 0.2 J single-pulse avalanche energy.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-pin, exposed drain pad for thermal dissipation; compatible with standard reflow profiles and manual soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VND5N07, STVN7012AJR offers superior conduction efficiency but forfeits analog control flexibility, while BTS716G adds precision current sensing at the cost of higher input bias and reduced integration density-making VND5N07 optimal for cost-sensitive, space-constrained, analog-dimmable high-side switching.

Availability

VND5N07 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and motor starter circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VND5N07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and broad IP portfolio.

The VND5N07 belongs to ST's OMNIFET II family of protected high-side switches, designed specifically for replacing discrete MOSFETs in harsh-environment DC load control where reliability, diagnostics, and compact integration are critical.

FAQ

Can VND5N07 be used as a low-side switch?

No. VND5N07 is a dedicated high-side switch with source tied to GND and drain as output. Its internal architecture-including diagnostic feedback through the IN pin and clamp referenced to OUT-requires load connection between OUT and positive supply. Low-side use would disable protection functions and violate absolute maximum ratings.

What is the minimum input voltage required to achieve full R_DS(on) performance?

A minimum input voltage of 5 V is required to ensure R_DS(on) ≤ 280 mΩ. At 5 V_IN, typical R_DS(on) is 280 mΩ; at 10 V_IN, it drops to 200 mΩ. Below 5 V, the device enters linear region with rising on-resistance-intentionally supporting analog dimming but not rated for continuous full-load conduction.

How does the diagnostic feedback signal behave during short-circuit events?

During short-circuit, the linear current limiter activates first. If sustained, junction temperature rises until thermal shutdown triggers at 150 °C. At that point, the internal switch disconnects IN from the gate and connects it to GND via ~100 Ω, pulling the IN pin to <0.5 V-detectable by any MCU GPIO with Schmitt-trigger input, enabling immediate software response.

Is VND5N07 compliant with AEC-Q100 for automotive use?

No. VND5N07 is not AEC-Q100 qualified. It is specified for industrial and consumer applications with operating junction temperature up to 150 °C, but lacks the stress testing, failure analysis, and documentation required for automotive qualification. For AEC-Q100-compliant alternatives, consider ST's VND7050AJ or VNQ7050AJ series.