STMicroelectronics VND5N07-1

Overview

VND5N07-1 from STMicroelectronics is an OMNIFET II fully autoprotected high-side N-channel Power MOSFET in IPAK (TO-251) package, designed for DC–50 kHz switching in automotive and industrial load control. It features 0.2 Ω R_DS(on) at 10 V_IN, 5 A typical current limitation, 70 V drain-source clamp voltage, and integrated thermal shutdown. Used in body electronics for driving solenoids, lamps, and small motors.

For engineers reviewing the VND5N07-1 datasheet, VND5N07-1 pinout, VND5N07-1 application, or VND5N07-1 equivalent, this page delivers verified electrical specs, protection behavior, diagnostic feedback implementation, and real-world substitution guidance - all grounded in ST's official DocID4335 Rev 4 datasheet.

Technical Context

The VND5N07-1 integrates a VIPower M0-process power MOSFET with linear current limiting, overvoltage clamping at 70 V, and junction temperature sensing for autonomous thermal shutdown at ≥150 °C. Its input pin serves dual roles: gate drive interface and fault status indicator via 100 Ω pull-down during overtemperature events.

It operates as a high-side switch with direct analog gate access, enabling TTL-compatible driving and diagnostic monitoring without external circuitry. Protection functions are fully autonomous - independent of input voltage level - and activate across the full operating junction temperature range (−40 °C to 150 °C).

Key Specifications

Pinout & Package

IPAK (TO-251) package: three-terminal surface-mount power package with isolated tab (drain-connected), standardized for high-power density PCB layouts and mechanical mounting via tab screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VND5N07-1, STVN7012AJTR offers higher current capacity but sacrifices thermal robustness in compact layouts, while VND7050AJTR trades raw ruggedness for diagnostic fidelity - making VND5N07-1 optimal for cost-sensitive, thermally demanding 5 A switching where simplicity and proven field reliability are prioritized.

Availability

VND5N07-1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, motor starter circuits, and smart fuse replacements requiring stable component supply and long-term lifecycle support.

Supply support for VND5N07-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing and broad IP portfolio.

VND5N07-1 belongs to the OMNIFET II family of protected high-side switches, engineered specifically for replacing discrete MOSFETs + protection circuits in harsh-environment DC load control - emphasizing ruggedness, self-diagnosis, and design simplification.

FAQ

What is the maximum continuous drain current for VND5N07-1 under typical PCB conditions?

The device limits current to 5 A typ under overload, but continuous current depends on thermal design. With 5.2 °C/W junction-to-case resistance and 25 °C case temperature, it sustains ~4.3 A continuously before reaching 150 °C junction limit - verified per Fig. 12 derating curve in ST DocID4335 Rev 4.

Can VND5N07-1 be driven directly by a 3.3 V microcontroller GPIO?

No - its input threshold voltage (V_IN(th)) ranges from 0.8 V to 3 V, but guaranteed R_DS(on) and full current limiting require ≥5 V input. At 3.3 V, R_DS(on) rises significantly (see Fig. 13), increasing conduction loss and thermal stress; a level shifter or buffer is recommended.

How does the diagnostic feedback function during overtemperature fault?

During overtemperature, the internal protection disconnects the input pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the input voltage near 0 V when driven high, allowing simple GPIO monitoring - no external pull-up or ADC required, as confirmed in Section 3.4 and Table 9 of the datasheet.

Is VND5N07-1 suitable for PWM switching at 20 kHz?

Yes - the datasheet explicitly states suitability for DC to 50 kHz applications. Switching times (e.g., 100 ns rise time with 10 Ω driver) and low Q_i (18 nC) support clean 20 kHz PWM with minimal switching loss, provided gate drive strength and layout minimize inductance, as validated in Figure 17 and Table 7.