STMicroelectronics VND7N04-E

Overview

VND7N04-E from STMicroelectronics is a monolithic VIPower M0-based fully autoprotected high-side power switch, functioning as a ruggedized replacement for standard N-channel MOSFETs in DC–50 kHz switching applications. It delivers 7 A current limit, 0.14 Ω R_DS(on) at 10 V_IN, 42 V integrated overvoltage clamp, thermal shutdown at 150 °C, and diagnostic feedback via the input pin. It is used in automotive body control modules for driving solenoids and lamps.

For engineers reviewing the VND7N04-E datasheet, VND7N04-E pinout, VND7N04-E application, or VND7N04-E equivalent, this page provides verified electrical parameters, protection behavior under fault conditions, package-specific thermal data, and validated alternatives for high-side load switching designs requiring built-in linear current limiting and clamping.

Technical Context

The VND7N04-E integrates gate drive, protection logic, and a power MOSFET into a single DPAK (TO-252) package. Its linear current limiter activates at 7 A regardless of input voltage, forcing operation in the linear region during overload - requiring careful thermal design. The internal clamp triggers at 42 V with ±10 V tolerance, enabling safe inductive load switching without external snubbers.

Fault detection is implemented by disconnecting the input from the gate and sinking ~50 mA to ground through a 100 Ω path when thermal or short-circuit faults occur. Input pin voltage drops below 0.25 V during fault, enabling simple microcontroller-level monitoring without additional circuitry.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 (Input), Pin 2 (Source), Pin 3 (Drain). Drain pad electrically connected to Pin 3 and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with VND7N04-E, VND7NV04TR-E offers higher voltage and current headroom at the cost of thermal performance, while IPS1032H trades current limit robustness for measurement fidelity and lower on-resistance - making each optimal for distinct load profiles and sensing requirements.

Availability

VND7N04-E is available at Aetrix Electronics and suitable for automotive lighting control, industrial solenoid actuation, motor starter interfaces, and heater element switching requiring stable component supply across production lifecycles.

Supply support for VND7N04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The VND7N04-E belongs to ST's VIPower® OMNIFET™ family - engineered specifically for high-side power switching in harsh environments where integrated protection, diagnostic capability, and reliability outweigh raw efficiency metrics.

FAQ

What is the maximum continuous drain current for VND7N04-E under real-world thermal conditions?

The device is rated for 7 A current limit, but continuous operation depends on thermal design. With a 3.75 °C/W R_thj-case and 25 °C case temperature, maximum continuous power dissipation is 60 W - corresponding to ~20 A × 0.14 Ω = 28 W at full R_DS(on). At 7 A, dissipation is ~6.9 W, allowing operation up to ~100 °C case temperature with adequate heatsinking.

Can VND7N04-E be used in PWM applications above 10 kHz?

Yes - the datasheet specifies operation up to 50 kHz. At 10 kHz with 50% duty cycle, switching losses remain manageable: t_d(on)/t_r/t_d(off)/t_f are ≤150/180/300/200 ns respectively with 10 Ω gate drive. Layout must minimize gate loop inductance to avoid ringing, especially during turn-off with inductive loads.

How does the diagnostic feedback function during overtemperature fault?

When junction temperature reaches 150 °C, the internal protection circuit disconnects the IN pin from the gate and connects it to ground via an effective 100 Ω resistor. This pulls the input voltage to ≤0.25 V, which can be sampled by a microcontroller ADC or GPIO with pull-up. Fault clears automatically when T_j falls below 135 °C.

Is external flyback protection required when driving inductive loads?

No - the integrated 42 V clamp and 0.4 J avalanche energy rating handle typical 12 V automotive inductive transients (e.g., solenoids, relays). However, for loads with stored energy exceeding 0.4 J or clamping voltage >42 V, an external TVS remains necessary. The clamp is not intended for repetitive high-energy events.