STMicroelectronics VND7NV04-1-E

Overview

VND7NV04-1-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected high-side Power MOSFET in TO-251 (IPAK) package, designed for DC–50 kHz switching of inductive and resistive loads. It features 60 mΩ R_DS(on) at 3.5 A/25 °C, 6 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 150–200 °C, and diagnostic feedback via input pin. Used in automotive body control modules for driving solenoids, relays, and lamps.

For engineers reviewing the VND7NV04-1-E datasheet, VND7NV04-1-E pinout, VND7NV04-1-E application, or VND7NV04-1-E equivalent, this page delivers verified electrical specs, protection behavior, thermal derating data, fault-sink current (15 mA), and IPAK package layout - all critical for robust high-side switch design in harsh environments.

Technical Context

The VND7NV04-1-E integrates gate driver, linear current limiter, thermal sensor, and avalanche-rated power stage in a single VIPower M0-3 die. Its input pin directly controls the internal MOSFET gate with only 100–150 µA supply current, enabling TTL-compatible drive while supporting analog dimming via variable input voltage.

Protection logic operates independently of input voltage: overtemperature shutdown triggers at 150–200 °C junction temperature, short-circuit detection relies on real-time die-temperature sensing, and the 40 V clamp activates during unclamped inductive turn-off to absorb up to 200 mJ single-pulse avalanche energy.

Key Specifications

Pinout & Package

Package: TO-251 (IPAK), 3-pin single-ended leaded package with exposed drain pad for thermal conduction. Mounting requires soldering the drain tab to ≥100 mm² copper area for R_thj-amb ≤102 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side switch applications.

Compared with VND7NV04-1-E, the VND7NV04-E offers superior thermal management in production systems needing >7 W dissipation, while the VNS7NV04 trades thermal capacity for compactness - making the IPAK version optimal for cost-sensitive, medium-power automotive modules requiring ruggedness and diagnostics.

Availability

VND7NV04-1-E is available at Aetrix Electronics and suitable for automotive body control, industrial solenoid actuation, and LED lamp dimming requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for VND7NV04-1-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and AEC-Q100 qualification expertise.

The OMNIFET II product line delivers fully protected high-side switches for automotive and industrial applications, integrating protection, diagnostics, and rugged power stages to replace discrete MOSFET+driver+protection solutions.

FAQ

What is the maximum continuous drain current for VND7NV04-1-E?

The device features a 6 A typical linear current limit under normal conditions, but continuous current depends on thermal design. With the TO-251 package mounted on ≥100 mm² copper, it supports up to 3.5 A continuous at 25 °C ambient. Derating curves show 1.5 A max at 85 °C ambient - exceeding this risks thermal shutdown.

Does VND7NV04-1-E require an external flyback diode when driving inductive loads?

No external flyback diode is required due to its integrated 40 V overvoltage clamp and 200 mJ avalanche energy rating. The internal clamp safely absorbs inductive kickback during turn-off, validated for unclamped inductive loads up to 0.7 mH at 13.5 V supply - confirmed in ST's Figure 30–35 test data.

How does the diagnostic feedback function work during thermal fault?

When junction temperature exceeds 150–200 °C, the device actively sinks 15 mA through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the input voltage low, signaling fault. If the driver has high impedance, the pin falls to 0 V - still detectable as a logic-low state without affecting normal operation.

Can VND7NV04-1-E be used in PWM applications above 10 kHz?

Yes - the datasheet specifies operation up to 50 kHz. Switching times (t_d(on) = 100 ns, t_f = 350 ns with 150 Ω gate resistance) support efficient high-frequency PWM. However, thermal management becomes critical above 20 kHz due to increased switching losses; PCB copper area and airflow must be optimized per Figure 37–47 derating curves.