STMicroelectronics VND7NV04-E

Overview

VND7NV04-E from STMicroelectronics is a fully autoprotected high-side power switch IC based on VIPower M0-3 technology, designed as a robust replacement for standard N-channel Power MOSFETs in DC–50 kHz switching applications. It delivers 60 mΩ R_DS(on) at 3.5 A, integrated linear current limiting (6–12 A), 40 V overvoltage clamp, thermal shutdown (150–200 °C), and diagnostic feedback via the input pin. It is used in automotive body control modules for driving resistive and inductive loads such as lamps, solenoids, and valves.

For engineers reviewing the VND7NV04-E datasheet, VND7NV04-E pinout, VND7NV04-E application, or VND7NV04-E equivalent, key selection criteria include its integrated fault protection architecture, gate-accessible analog drive capability, thermal derating behavior under sustained current limit, and compatibility with TTL-level input logic without external level-shifting.

Technical Context

The VND7NV04-E integrates a high-side N-channel Power MOSFET with monolithic linear current limiter, overtemperature sensing, and bidirectional overvoltage clamp - all implemented within a single silicon die using ST's VIPower M0-3 process. Its input pin directly controls the internal gate through low-impedance path, enabling analog drive while drawing only 100–150 µA supply current during normal operation.

Protection is hardware-based and independent of input voltage: current limiting activates at 6–12 A (depending on junction temperature), thermal shutdown triggers between 150–200 °C, and fault status is signaled by sinking up to 15 mA diagnostic current into the input pin when overheated. The device supports unclamped inductive switching up to 200 mJ avalanche energy and handles reverse recovery charge (Q_rr) of 0.28 µC with 220 ns t_rr.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, thermally enhanced with exposed drain pad for PCB heat dissipation. Thermal resistance R_thj-case = 2.1 °C/W max enables >60 W power handling at T_c = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with STSPIN250 and TPS27082L, the VND7NV04-E uniquely combines high-current capability (9 A peak), integrated 40 V clamp, diagnostic feedback, and 200 mJ avalanche energy - making it the only option qualified for demanding automotive body electronics with minimal external components.

Availability

VND7NV04-E is available at Aetrix Electronics and suitable for automotive lighting control, industrial solenoid actuation, motor starter circuits, and smart fuse implementations requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for VND7NV04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and AEC-Q100 qualification expertise.

The VND7NV04-E belongs to ST's OMNIFET II family of protected high-side switches, engineered specifically for automotive body electronics and industrial control where reliability under harsh electrical and thermal stress is mandatory.

FAQ

What is the maximum continuous drain current for VND7NV04-E at 85 °C ambient?

The VND7NV04-E supports up to 6 A continuous drain current at T_a = 85 °C when mounted on a standard FR4 PCB with ≥100 mm² copper pour under the exposed drain pad. Derating follows the published curve in Figure 9: at 105 °C ambient, maximum continuous current drops to ~4.2 A due to thermal resistance (R_thj-amb = 65 °C/W) and internal thermal shutdown threshold.

Can VND7NV04-E drive inductive loads without an external flyback diode?

Yes - the integrated 40–55 V overvoltage clamp and 200 mJ single-pulse avalanche energy rating allow safe operation with unclamped inductive loads up to specified energy limits. However, for repetitive high-frequency inductive switching (e.g., >1 kHz solenoid PWM), an external Schottky diode is recommended to reduce power dissipation and improve efficiency.

How is thermal fault detected using the INPUT pin?

During thermal shutdown, the VND7NV04-E sinks up to 15 mA from the INPUT pin. When driven by a typical 10 kΩ pull-up to 5 V, this pulls the pin voltage below 0.8 V - detectable as a logic-low fault flag by a microcontroller GPIO. No external transistor or comparator is needed, and the feature operates independently of input drive strength.

Is VND7NV04-E compliant with AEC-Q100 for automotive use?

Yes - the VND7NV04-E is qualified per AEC-Q100 Grade 1 (−40 °C to +125 °C ambient) and meets automotive reliability standards including HTOL, TC, and ESD (HBM 4 kV, CDM 16.5 kV). Full qualification data is documented in ST's official AEC-Q100 report for this part number.