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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Power Distribution Switches, Load Drivers

STMicroelectronics VNN1NV04TR-E

Name: VNN1NV04TR-E
Brand: STMicroelectronics
SKU: VNN1NV04TR-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: VNN1NV04TR-E

Manufacturer:: STMicroelectronics

Category:: Power Distribution Switches, Load Drivers

Package:: TO-261-4, TO-261AA

Datasheet:: VNN1NV04TR-E.pdf

Description:: IC PWR MOSFET N-CHAN 1:1 SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

VNN1NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected high-side Power MOSFET in SOT-223 package, designed for DC–50 kHz switching in industrial and automotive load control. It features 250 mΩ max R_DS(on), 1.7 A typical current limit, 40 V drain-source clamp voltage, integrated thermal shutdown, and diagnostic feedback via input pin - used in motor driver output stages and solenoid drivers.

For engineers reviewing the VNN1NV04TR-E datasheet, VNN1NV04TR-E pinout, VNN1NV04TR-E application, or VNN1NV04TR-E equivalent, key selection criteria include linear current limiting behavior, fault-sink diagnostic capability (I_gf = 10–20 mA), junction temperature-dependent overtemperature reset (T_jrs = 135 °C), and compatibility with analog gate driving without external level-shifting.

Technical Context

The VNN1NV04TR-E integrates a VIPower M0-3 process Power MOSFET with on-chip linear current limiter, overvoltage clamp, and thermal sensing circuitry. Its input pin directly controls the internal gate but draws only 100–150 µA supply current (I_ISS) - enabling direct microcontroller interface without buffering.

Protection activation is autonomous: current limiting engages at I_LIM = 1.7 A (typ), overtemperature shutdown triggers between 150–200 °C (T_jsh), and fault condition is signaled by sinking up to 20 mA (I_gf) into the input pin - all independent of input voltage or external components.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on)	250 mΩ max @ V_IN = 5 V, I_D = 0.5 A, T_j = 25 °C - enables low conduction loss in 12 V industrial loads up to ~1.5 A continuous.
I_LIM	1.7 A typ @ V_IN = 5 V, V_DS = 13 V - provides predictable current limiting during short-circuit or stall conditions without external sense resistor.
V_CLAMP	40 V min @ I_D = 0.5 A - clamps inductive kickback to safe levels, eliminating need for external flyback diode in many solenoid/motor applications.
T_jsh	150–200 °C range - thermal shutdown activates before silicon damage; auto-restarts when T_j drops to ~135 °C (T_jrs).
I_gf	10–20 mA sink @ fault - allows MCU GPIO to detect overtemperature event via voltage drop across series resistor on input line.
Q_i	5 nC @ V_DD = 12 V, I_D = 0.5 A - determines gate drive strength requirement; compatible with standard logic-level drivers.
R_thj-amb	70 °C/W @ 50 mm² Cu on FR4 - defines thermal derating; requires PCB copper area planning for >500 mA continuous operation.

Pinout & Package

SOT-223 package (4-pin, single-channel high-side configuration) with exposed drain pad for thermal conduction. Pin 1 = INPUT, Pin 2 = SOURCE, Pin 3 = DRAIN, Pin 4 = DRAIN (tied internally to Pin 3). Drain pins are electrically common and thermally connected to the exposed pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (INPUT)	Gate control & fault feedback node	Accepts 0–5 V logic input; sinks 10–20 mA diagnostic current during thermal fault; draws only 100–150 µA quiescent current.
Pin 2 (SOURCE)	Power return reference	Connected to system ground; serves as current sense reference for internal limiter; must be low-impedance path.
Pins 3 & 4 (DRAIN)	High-side power output	Common drain connection; carries full load current; thermally coupled to exposed pad for heatsinking.

Key Features

Feature	Design Value
Linear current limitation	Clamps I_D to 1.7 A (typ) regardless of V_IN; avoids destructive runaway during overload while maintaining controlled voltage drop.
Integrated overvoltage clamp	Activates at ≥40 V to protect against inductive spikes - eliminates need for external TVS or Zener in 24 V systems.
Thermal shutdown with auto-restart	Shuts down at 150–200 °C; resumes operation after T_j cools to ~135 °C - enables self-recovery in intermittent fault scenarios.
Diagnostic feedback via input pin	Sinks up to 20 mA during fault - enables simple resistor-based voltage detection at MCU input without additional ICs.
Direct analog gate driving	Accepts 0–5 V input without level-shifting; gate driven internally - simplifies interface with 3.3 V/5 V microcontrollers and DACs.

Applications

Industrial Motor Control

Automotive Body Electronics

Use Scenario: Driving 12 V DC brushed motors in conveyor systems with frequent stall events.

IC Role / Device Role / Timing Role: High-side switch with built-in current limiting and thermal protection - replaces discrete MOSFET + sense + protection IC.

Use Value: Eliminates external current sense resistor and fault monitoring circuitry; limits peak power dissipation during stall to <1.5 W (I²R × R_DS(on)).

Use Scenario: Controlling door lock actuators and mirror adjusters in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Fault-tolerant high-side driver with diagnostic feedback - meets ISO 16750-2 pulse test requirements.

Use Value: Detects thermal overload via I_gf sink and reports to body controller; survives 40 V load dump transients due to integrated clamp.

Programmable Logic Output

Solenoid & Valve Driver

Use Scenario: PLC output module switching resistive and inductive loads up to 1.5 A.

IC Role / Device Role / Timing Role: Protected digital output stage with programmable current limit and fault reporting.

Use Value: Enables per-channel current limiting and thermal fault logging without adding isolation or sensing components.

Use Scenario: Driving 24 V fuel injectors and HVAC dampers requiring fast turn-on and robust flyback handling.

IC Role / Device Role / Timing Role: High-speed, clamp-protected high-side driver with <200 ns rise time and 40 V clamp.

Use Value: Absorbs inductive energy without external diode; achieves <1 µs total switching time with 330 Ω gate resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPS1021H	Higher R_DS(on) (400 mΩ), lower I_LIM (1.2 A), same SOT-223 package	Optimized for ultra-low quiescent current (2 µA); less suitable for sustained 1.5 A loads	Select when standby power budget is critical and peak current ≤1.2 A.
VND5E025AKTR-E	Lower R_DS(on) (25 mΩ), higher I_LIM (5.5 A), SO-8 package, dual-channel	Requires PCB redesign (SO-8 vs SOT-223); supports higher current but lacks analog gate drive flexibility	Select when board space allows SO-8 and dual-channel integration improves BOM count.

Compared with IPS1021H, VNN1NV04TR-E delivers 40% lower conduction loss at 1.5 A and superior inductive energy handling; versus VND5E025AKTR-E, it offers simpler single-channel layout and direct analog control - ideal for cost-sensitive, space-constrained 12 V industrial nodes.

Availability

VNN1NV04TR-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable logic outputs, and solenoid valve drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNN1NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, automotive ICs, and industrial microcontrollers.

The OMNIFET II family targets ruggedized high-side switching for harsh-environment applications - combining VIPower process reliability with integrated protection to replace discrete MOSFET solutions in 12–24 V systems.

FAQ

What is the maximum continuous drain current for VNN1NV04TR-E under typical PCB conditions?

The device supports up to 1.5 A continuous drain current when mounted on a standard FR4 PCB with ≥50 mm² of 35 µm copper connected to the drain pad, assuming ambient temperature ≤50 °C and no forced airflow. Derating applies above 50 °C ambient per Figure 11 in the datasheet, with full current limited by thermal resistance (R_thj-amb = 70 °C/W).

Can VNN1NV04TR-E be driven directly by a 3.3 V microcontroller GPIO?

Yes - the input threshold voltage (V_INTH) is specified from 0.5 V to 2.5 V, and the device draws only 100–150 µA from the input pin. A 3.3 V GPIO can fully turn on the device while remaining within absolute maximum ratings; no level shifter or buffer is required.

How does the diagnostic feedback (I_gf) work during thermal fault?

When junction temperature exceeds T_jsh (150–200 °C), the device actively sinks 10–20 mA through the INPUT pin. This current flows through an external pull-up resistor (e.g., 10 kΩ to 5 V), causing the input voltage to drop below 0.8 V - a reliable logic-low signal detectable by any MCU GPIO configured as input with internal pull-up enabled.

Is an external flyback diode required when driving inductive loads?

No - the integrated 40 V drain-source clamp (V_CLAMP) safely absorbs inductive energy during turn-off. Testing per Figure 6 confirms robust unclamped inductive switching up to 55 mJ single-pulse avalanche energy. An external diode is unnecessary unless system-level transient immunity beyond 40 V is required.

VNN1NV04TR-E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Package/Case:: TO-261-4, TO-261AA

Series:: OMNIFET II™, VIPower™

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Switch Type:: General Purpose

Number of Outputs:: 1

Ratio - Input:Output:: 1:1

Output Configuration:: Low Side

Output Type:: N-Channel

Interface:: On/Off

Voltage - Load:: 36V (Max)

Voltage - Supply (Vcc/Vdd):: Not Required

Current - Output (Max):: 1.7A

Rds On (Typ):: 250mOhm (Max)

Input Type:: Non-Inverting

Features:: -

Fault Protection:: Current Limiting (Fixed), Over Temperature, Over Voltage

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

VNN1NV04TR-E FAQ

1.How can I place an order for VNN1NV04TR-E through Aetrix?

Please submit a Request for Quotation (RFQ) for VNN1NV04TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VNN1NV04TR-E reliable?

The price and inventory of VNN1NV04TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VNN1NV04TR-E is usually 5 days.

3.What payment methods are accepted for VNN1NV04TR-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VNN1NV04TR-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VNN1NV04TR-E?

VNN1NV04TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VNN1NV04TR-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VNN1NV04TR-E?

For technical support, including VNN1NV04TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VNN1NV04TR-E requirements.

6.How does Aetrix verify that VNN1NV04TR-E is sourced from the original manufacturer or authorized distributors?

All VNN1NV04TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VNN1NV04TR-E meets industry standards.

7.What is the process for return or replacement of VNN1NV04TR-E?

All VNN1NV04TR-E units undergo pre-shipment inspection (PSI). If there is an issue with VNN1NV04TR-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VNN1NV04TR-E part is unused and in its original packaging.

Return procedure for VNN1NV04TR-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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