STMicroelectronics VNN3NV0413TR

Overview

VNN3NV0413TR from STMicroelectronics is a monolithic OMNIFET II fully autoprotected Power MOSFET in SOT-223 package, designed as a rugged replacement for standard N-channel MOSFETs in DC–50 kHz switching applications. It features 120 mΩ R_DS(on), 3.5 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 170 °C typical, and diagnostic feedback via input pin for fault detection in industrial motor control and power supply load switching.

For engineers reviewing the VNN3NV0413TR datasheet, VNN3NV0413TR pinout, VNN3NV0413TR application, or VNN3NV0413TR equivalent, this page delivers verified electrical specs, protection behavior under short-circuit/inductive load conditions, thermal derating curves, input charge (8.5 nC), and real-world design meaning of its linear current limiter, gate-accessible analog drive, and ESD-hardened (4 kV HBM) interface.

Technical Context

This device integrates VIPower™ M0-3 technology to embed protection logic directly with the power stage: overvoltage clamp triggers at 36 V threshold and clamps at 45 V typ., while linear current limiting activates at I_lim = 3.5 A (min) and sustains operation in linear mode until thermal shutdown intervenes. Fault signaling occurs via sink current (10–20 mA) on the input pin when junction temperature exceeds 150–200 °C.

The input pin connects directly to the internal gate through low-impedance path, enabling TTL-compatible driving with only 100–150 µA quiescent supply current. Its source-drain diode exhibits 0.8 V forward drop at 1.5 A, and avalanche energy rating is 100 mJ (single-pulse, 24 V, 24 mH), confirming suitability for unclamped inductive switching.

Key Specifications

Pinout & Package

SOT-223 package: surface-mount, 3-pin, single-ended power transistor outline with exposed drain pad for thermal conduction. Pin 1 = INPUT, Pin 2 = DRAIN, Pin 3 = SOURCE.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected Power MOSFET applications.

Compared with VNN3NV0413TR, VND3NV0413TR offers 5× higher power handling in DPAK but sacrifices board-space efficiency, while VNS3NV0413TR provides dual-channel integration at the cost of functional redundancy and non-interchangeable pinout - neither replicates the SOT-223 form factor and single-channel simplicity of the original.

Availability

VNN3NV0413TR is available at Aetrix Electronics and suitable for industrial motor control, DC power supply load switching, automotive body electronics, and smart lighting drivers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for VNN3NV0413TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, and consumer markets since 1987.

VNN3NV0413TR belongs to the OMNIFET II family of autoprotected Power MOSFETs, engineered specifically for replacing discrete MOSFETs in harsh-environment DC–50 kHz switching applications where reliability, integrated protection, and simplified design are critical.

FAQ

What is the maximum continuous drain current for VNN3NV0413TR?

The device features a linear current limit of 3.5 A minimum at V_IN = 5 V and V_DS = 13 V. Continuous operation above this level forces the MOSFET into linear mode, increasing power dissipation - actual steady-state current depends on PCB thermal design and ambient temperature, with 7 W total dissipation limit at T_c = 25 °C in SOT-223.

Does VNN3NV0413TR require an external flyback diode?

No external flyback diode is required for inductive loads due to the integrated 40 V overvoltage clamp and rugged avalanche capability (100 mJ). The internal clamp activates when V_DS exceeds ~36 V, safely dissipating inductive energy - however, for high-frequency or high-energy applications, external snubbing may still improve EMI performance.

How does the diagnostic feedback function work?

During thermal shutdown (T_j ≥ 150 °C), the device sinks 10–20 mA from the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the input voltage toward ground, signaling fault. If the driver has high impedance, the pin falls to 0 V - no damage occurs, and the device resumes normal operation once junction temperature drops ~15 °C below shutdown threshold.

Can VNN3NV0413TR be used with 3.3 V logic?

Yes - the input threshold voltage is specified from 0.5 V to 2.5 V, and IISS supply current remains within 100–150 µA at V_IN = 3.3 V. However, R_DS(on) increases slightly at lower V_IN; at 3.3 V, typical R_DS(on) rises to ~180 mΩ (vs 120 mΩ at 5 V), increasing conduction loss by ~50% - verify thermal margin in final design.