STMicroelectronics VNN7NV04TR-E

Overview

VNN7NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected high-side Power MOSFET in SOT-223 package, designed for DC–50 kHz switching in automotive and industrial load control. It features 60 mΩ R_DS(on) at 3.5 A/25 °C, 6 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 150–200 °C, and diagnostic feedback via input pin.

For engineers reviewing the VNN7NV04TR-E datasheet, VNN7NV04TR-E pinout, VNN7NV04TR-E application, or VNN7NV04TR-E equivalent, this device serves as a robust, fault-tolerant replacement for standard N-channel Power MOSFETs in harsh-environment inductive load switching-especially where current limiting, overtemperature detection, and clamped energy dissipation are critical.

Technical Context

The VNN7NV04TR-E integrates gate driver, linear current limiter, thermal sensor, and overvoltage clamp into a single VIPower M0-3 monolithic die. Its input pin directly controls the internal power MOSFET gate with low-impedance access, enabling analog driving while drawing only 100–150 µA supply current during normal operation.

Protection logic operates independently of input voltage: current limiting activates at 6–12 A (depending on junction temperature), thermal shutdown triggers between 150–200 °C, and fault feedback sinks 15 mA through the input pin when overheated-enabling real-time system-level diagnostics without external sensors.

Key Specifications

Pinout & Package

SOT-223 package: surface-mount, 3-pin, thermally enhanced with exposed drain pad (pin 1 = DRAIN, pin 2 = INPUT, pin 3 = SOURCE). Mounting requires minimum 0.5 mm² copper area per drain pin for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VNN7NV04TR-E, VND7NV04TR-E delivers superior thermal handling in high-power applications but demands board redesign, while IPS1021H trades analog control simplicity for digital configurability and tighter integration in multi-channel architectures.

Availability

VNN7NV04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, smart HVAC actuators, and medical fluid control systems requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for VNN7NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and AEC-Q100 qualification capabilities.

The OMNIFET II product line targets ruggedized high-side switching for automotive and industrial environments-designed to replace discrete MOSFETs with integrated protection, reducing design complexity and improving system reliability.

FAQ

What is the maximum continuous drain current for VNN7NV04TR-E at 85 °C ambient?

At T_a = 85 °C with standard FR4 PCB (0.5 mm² Cu), the maximum continuous drain current is approximately 2.8 A-determined by thermal derating from its 7 W P_tot rating and 96 °C/W R_thj-amb. This assumes adequate copper pour and no forced airflow. Exceeding this risks thermal shutdown activation.

Can VNN7NV04TR-E be used in parallel for higher current capacity?

No-VNN7NV04TR-E is not characterized or recommended for paralleling. Its R_DS(on) has ±20% unit-to-unit variation, and lack of current-sharing control leads to thermal imbalance. For higher current, use the DPAK-packaged VND7NV04TR-E or select a higher-rated single device.

How does the diagnostic feedback function during overtemperature fault?

When junction temperature exceeds T_jsh, the device sinks 15 mA through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO with ≤1 kΩ series resistance), this pulls the input voltage near 0 V-detectable as a logic-low fault signal. High-impedance drivers will see input collapse without affecting switching state.

Is external flyback diode required when switching inductive loads?

No external flyback diode is required for typical 12 V/24 V inductive loads-the integrated 40–55 V clamp safely dissipates energy from unclamped inductive turn-off. However, for loads exceeding 200 mJ single-pulse energy (e.g., large solenoids), an external diode or RC snubber remains advisable to reduce stress on the internal clamp.