STMicroelectronics VNP10N07FI-E

Overview

VNP10N07FI-E from STMicroelectronics is a fully autoprotected monolithic power MOSFET in the OMNIFET® family, fabricated using VIPower M0 technology. It delivers 70 V drain-source voltage rating, 0.1 Ω R_DS(on) at 5 A, and integrated linear current limiting (10 A), thermal shutdown (150 °C), and overvoltage clamp (70 V). It serves as a rugged, self-protected high-side switch in DC–50 kHz inductive load control circuits such as automotive body electronics and industrial solenoid drivers.

For engineers reviewing the VNP10N07FI-E datasheet, VNP10N07FI-E pinout, VNP10N07FI-E application, or VNP10N07FI-E equivalent, this page provides verified electrical parameters, protection behavior under fault conditions, thermal resistance data, diagnostic feedback implementation via input pin, and validated alternatives for high-reliability switching applications requiring built-in clamping and current limiting.

Technical Context

The device integrates gate driver, current-sense, thermal sensor, and clamp circuitry on a single die with the main power MOSFET. Its input pin directly controls the internal gate but also enables status feedback: during overtemperature fault, the input is actively pulled to ground via 100 Ω, enabling simple open-collector fault detection.

Protection functions operate independently of input voltage - current limiting activates at ≥7 A (Vin = 5 V) or ≥10 A (Vin = 10 V), thermal shutdown triggers at ≥150 °C, and reset occurs at ≤135 °C. The integrated freewheeling diode exhibits 1.6 V forward drop at 5 A and 125 ns reverse recovery time.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263), surface-mount, isolated tab (drain-connected), 3-pin configuration with input, source, and drain terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with STVN7012F and IPS1025H, VNP10N07FI-E uniquely combines analog gate access, input-pin fault signaling, and 70 V clamping in a compact D2PAK - making it optimal for cost-sensitive, MCU-light designs where simplicity and ruggedness outweigh digital configurability or precision sensing.

Availability

VNP10N07FI-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, and smart lighting ballast applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for VNP10N07FI-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets.

VNP10N07FI-E belongs to the OMNIFET® family - a line of VIPower-based protected switches engineered for harsh-environment DC–50 kHz load control where reliability, integration, and fault resilience are critical.

FAQ

What is the function of the Input pin beyond gate control?

The Input pin serves dual roles: during normal operation, it drives the internal MOSFET gate; during thermal fault, it becomes an active-low diagnostic output pulled to ground via 100 Ω. This enables real-time fault detection using only a pull-up resistor and MCU GPIO - no additional ICs or complex circuitry required.

Can VNP10N07FI-E replace a standard N-channel MOSFET directly?

Yes, but with two key design considerations: (1) a small quiescent current (250–500 µA) flows into the Input pin to power internal circuitry, and (2) the device enters linear current limiting above ~7–10 A, so heatsink sizing must account for potential power dissipation during sustained overload - unlike standard MOSFETs that fail catastrophically.

What does "linear current limitation" mean in practice?

When load current exceeds the set limit (e.g., 10 A at 10 V input), the device regulates ID by dynamically adjusting V_GS, forcing operation in the linear region. This holds current constant but increases power dissipation (P = V_DS × I_D). If sustained, junction temperature rises until thermal shutdown activates at 150 °C.

Is the integrated diode suitable for continuous freewheeling?

Yes - the monolithic source-drain diode has 1.6 V forward drop at 5 A and 125 ns reverse recovery time, making it suitable for continuous freewheeling in 24 V solenoid or relay drivers operating below 50 kHz. Its ruggedness is confirmed by E_as = 0.4 J, supporting repetitive inductive energy dissipation without degradation.