STMicroelectronics VNP35N07-E

Overview

VNP35N07-E from STMicroelectronics is a fully autoprotected monolithic VIPower MOSFET designed as a rugged replacement for standard N-channel power MOSFETs in DC–50 kHz switching applications. It integrates linear current limiting (35 A typ.), overvoltage clamp (70 V), thermal shutdown (150 °C), diagnostic feedback via input pin, and ESD protection (2000 V HBM), enabling reliable operation in automotive body control and industrial load driving.

For engineers reviewing the VNP35N07-E datasheet, VNP35N07-E pinout, VNP35N07-E application, or VNP35N07-E equivalent, key selection criteria include its integrated fault detection, 0.028 Ω R_DS(on) at 10 V_IN, TO-220 package thermal performance (R_thj-case = 1 °C/W), and compatibility with TTL-level gate drive without external level-shifting.

Technical Context

The VNP35N07-E implements ST's VIPower M0-3 process to embed protection logic, current-sensing, and thermal monitoring directly on the same die as the main power MOSFET. Its input pin serves dual roles: gate control during normal operation and fault-sink output (100 Ω pull-down) during overtemperature or short-circuit events.

Protection activation is autonomous-linear current limit triggers at 25–45 A depending on input voltage, overvoltage clamp engages at ~70 V, and thermal shutdown occurs at ≥150 °C with automatic restart at ≤135 °C. All protections operate independently of input voltage and are validated across junction temperature (−55 to 150 °C).

Key Specifications

Pinout & Package

Supplied in standard through-hole TO-220 package (1.9 g typical weight), with isolated tab electrically connected to drain. Thermal resistance junction-to-case is 1 °C/W max, enabling 125 W dissipation at T_C = 25 °C with adequate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected power switch applications.

Compared with STSPIN250 and IPS1021H, the VNP35N07-E delivers superior single-channel current handling (35 A), higher avalanche energy (2.5 J), and broader input voltage compatibility (0.8–18 V), making it optimal for high-reliability, high-energy DC load switching where fault visibility and thermal resilience are critical.

Availability

VNP35N07-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor starters, smart power outlets, and LED streetlight drivers requiring stable component supply and long-term design-in support.

Supply support for VNP35N07-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The VNP35N07-E belongs to ST's VIPower "OMNIFET" family-engineered specifically for replacing unprotected discrete MOSFETs in harsh-environment DC switching applications with integrated protection and diagnostics.

FAQ

What is the function of the Input pin during normal operation versus fault condition?

During normal operation, the Input pin directly drives the internal MOSFET gate, behaving like a standard logic-level gate input. During overtemperature or short-circuit faults, the internal protection circuit disconnects the gate and pulls the Input pin to ground via a 100 Ω resistor, enabling simple voltage-level fault detection by a microcontroller GPIO.

Can the VNP35N07-E be used in high-frequency PWM applications above 50 kHz?

No-the device is explicitly characterized and qualified for DC to 50 kHz operation. At higher frequencies, switching losses increase significantly due to its 100 nC input charge and 600–1000 ns turn-off delay (with 10 Ω gate resistance), risking thermal instability and exceeding safe operating area limits.

Is external heatsinking required for continuous 35 A operation?

Yes-continuous 35 A operation requires active or substantial passive heatsinking. With R_thj-case = 1 °C/W and P_tot = 125 W at T_C = 25 °C, junction temperature rises rapidly above ambient; derating curves show usable current drops to ~18 A at T_C = 80 °C without forced cooling.

Does the VNP35N07-E support high-side or low-side switching configurations?

It supports both: as a high-side switch with source grounded and load between battery and drain, or as a low-side switch with drain grounded and load between supply and source. The TO-220 tab is connected to drain, so electrical isolation is mandatory when mounting to a common heatsink in high-side configurations.