STMicroelectronics VNP35NV04-E

Overview

VNP35NV04-E from STMicroelectronics is a monolithic VIPower® M0-3 OMNIFET II smart Power MOSFET in TO-220 package, designed as a protected replacement for standard N-channel power switches in DC–25 kHz switching applications. It delivers 30 A current limit, 10 mΩ R_DS(on) at 25°C, 40 V clamp voltage, and integrated thermal shutdown, linear current limiting, and overvoltage protection. Used in motor control, power supplies, and industrial load switching where fault resilience is critical.

For engineers reviewing the VNP35NV04-E datasheet, VNP35NV04-E pinout, VNP35NV04-E application, or VNP35NV04-E equivalent, key selection considerations include its diagnostic feedback via input pin, direct gate access for analog driving, ESD robustness (4 kV HBM), and compatibility with TTL-level logic drive - all validated for harsh-environment operation up to 150°C junction temperature.

Technical Context

The device integrates a high-voltage N-channel Power MOSFET with on-chip protection circuitry including a linear current limiter (I_lim = 30–60 A), overvoltage clamp (V_CLAMP = 40–55 V), and thermal shutdown (T_jsh = 150–200°C). Its input pin serves dual roles: gate drive interface and fault status indicator via sink current (I_gf = 10–20 mA) during overtemperature events.

It operates as a single-ended high-side switch with source-connected substrate, enabling direct connection to ground-referenced loads. The internal gate driver supports TTL-compatible input (V_IN = 0.5–2.5 V threshold) and draws only 100–150 µA supply current (I_ISS) during normal conduction - eliminating need for external level-shifting or bias networks.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (electrically connected to DRAIN), 3-pin configuration, through-hole mounting, and 125 W thermal dissipation capability at T_c = 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart Power MOSFET applications.

Compared with STP30NF20, VNP35NV04-E reduces system complexity by integrating protection and diagnostics; compared with VNV20N04TR-E, it trades surface-mount efficiency for through-hole mechanical robustness and heatsink compatibility - making it optimal for industrial field-serviceable designs.

Availability

VNP35NV04-E is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, programmable power supplies, and PLC output modules requiring stable component supply and long-term manufacturability.

Supply support for VNP35NV04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive-grade ICs.

The OMNIFET II product line targets ruggedized, self-protected power switching for industrial and automotive applications - emphasizing fault resilience, diagnostic capability, and simplified system integration over raw switching speed.

FAQ

What is the maximum continuous drain current for VNP35NV04-E?

The device does not specify a fixed continuous drain current rating; instead, it features a linear current limiter set to 30–60 A depending on operating conditions. Actual sustainable current depends on thermal design: with proper heatsinking (R_thj-case ≤ 1°C/W), it can deliver ≥20 A continuously at T_c = 80°C while staying within safe junction temperature limits.

Can VNP35NV04-E be used in high-side switching configurations?

Yes - VNP35NV04-E is inherently a high-side switch because its SOURCE terminal is internally referenced to ground, and DRAIN connects to the load's positive rail. It supports direct TTL-level input drive and provides diagnostic feedback on the INPUT pin, making it ideal for grounded-load topologies like automotive lighting and industrial solenoid control.

How does the diagnostic feedback function during thermal shutdown?

When junction temperature exceeds T_jsh (150–200°C), the device activates a 10–20 mA current sink on the INPUT pin. If driven by a low-impedance source (e.g., microcontroller GPIO), this pulls the pin voltage low, signaling fault. If driven high-impedance, the pin falls to 0 V - still detectable as a logic-low event without affecting normal operation.

Is external gate resistor required for safe operation?

A minimum 4.7 Ω series gate resistor (R_IN) is specified to ensure stable turn-on/turn-off timing and prevent oscillation. This value balances switching speed (typ. 150 ns td(on)) with EMI control and dV/dt immunity. Lower values risk ringing and shoot-through; higher values increase switching losses but improve noise immunity in noisy environments.