STMicroelectronics VNP49N04-E

Overview

VNP49N04-E from STMicroelectronics is a fully autoprotected monolithic VIPower MOSFET designed for DC–50 kHz switching in industrial and automotive power control applications. It integrates linear current limiting (49 A typ.), overvoltage clamp (42 V), thermal shutdown (150 °C), diagnostic feedback via input pin, and ESD protection (2000 V HBM). Its R_DS(on) is 0.02 Ω at V_IN = 10 V, ID = 25 A.

For engineers reviewing the VNP49N04-E datasheet, VNP49N04-E pinout, VNP49N04-E application, or VNP49N04-E equivalent, this device serves as a rugged, self-protected replacement for standard N-channel power MOSFETs in inductive load switching, motor control, and power distribution systems where fault resilience and diagnostic visibility are critical.

Technical Context

The VNP49N04-E implements ST's VIPower M0-3 technology, embedding protection logic, gate driver, and power MOSFET on a single die. Its linear current limiter operates independently of input voltage, clamping I_D to 49 A at V_IN = 10 V and 30 A at V_IN = 5 V, with step-response delay of 35–150 ms depending on drive level.

Overvoltage protection uses an internal clamp diode with threshold V_CLTH = 35 V and clamped V_DS = 42 V (typ.), enabling safe energy dissipation during inductive turn-off. Fault status is signaled by pulling the input pin to ground through ~100 Ω when thermal or short-circuit protection activates.

Key Specifications

Pinout & Package

Supplied in standard TO-220 package (1.9 g, 15.75 mm × 10.40 mm × 14 mm), with isolated tab (drain-connected), three leads: Input (gate control/diagnostic), Source (power return), Drain (high-side switch output).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side power switch applications.

Compared with STSPIN840 and IPS1030H, the VNP49N04-E delivers the highest continuous current capability (49 A) and lowest on-resistance (0.02 Ω) among ST's protected high-side switches, making it optimal for high-power, single-channel industrial and automotive loads where thermal margin and conduction efficiency are prioritized.

Availability

VNP49N04-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, DC motor drivers, and power distribution units requiring stable component supply across extended product lifecycles.

Supply support for VNP49N04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive-grade ICs.

The VNP49N04-E belongs to ST's OMNIFET™ family of protected power switches, engineered specifically for replacing unprotected MOSFETs in harsh-environment DC power control applications where reliability, fault visibility, and design simplification are essential.

FAQ

What is the maximum continuous drain current the VNP49N04-E can deliver?

The VNP49N04-E delivers up to 49 A continuous drain current when V_IN = 10 V and case temperature is maintained at 25 °C. At elevated temperatures or lower input voltages (e.g., V_IN = 5 V), the current limit drops to 30 A. Thermal derating must be applied per the datasheet's R_thj-case = 1 °C/W curve to avoid junction overheating.

How does the diagnostic feedback function during a fault condition?

During overtemperature or short-circuit fault, the internal protection circuit disconnects the input pin from the gate and connects it to ground through a ~100 Ω resistor. This pulls the input voltage near 0 V, allowing simple detection using a microcontroller GPIO or comparator without additional circuitry.

Can the VNP49N04-E be used with 3.3 V logic-level microcontrollers?

Yes - its input threshold voltage (V_IN(th)) ranges from 0.8 V to 3 V, ensuring reliable turn-on with 3.3 V logic. However, R_DS(on) increases slightly at lower V_IN; at V_IN = 3.3 V, R_DS(on) is approximately 0.035 Ω (vs. 0.02 Ω at 10 V), increasing conduction loss by ~75%.

Is external heatsinking required for full 49 A operation?

Yes - at 49 A and R_DS(on) = 0.02 Ω, conduction loss is 49 W. With R_thj-case = 1 °C/W, even a 25 °C ambient requires a heatsink capable of maintaining T_c ≤ 100 °C to keep T_j below 150 °C shutdown threshold. A minimum 50 cm² aluminum heatsink with thermal interface is recommended.