STMicroelectronics VNS14NV04-E

Overview

VNS14NV04 from STMicroelectronics is a monolithic VIPower™ M0-based protected Power MOSFET in SO-8 package, designed as a smart high-side switch for DC–50 kHz load control. It features 35 mΩ R_DS(on), 12 A linear current limit, 40 V integrated overvoltage clamp, thermal shutdown at 170 °C typical, and diagnostic feedback via input pin-used in automotive body electronics, industrial PLC outputs, and 12 V/24 V DC power distribution systems.

For engineers reviewing the VNS14NV04 datasheet, VNS14NV04 pinout, VNS14NV04 application, or VNS14NV04 equivalent, this page delivers verified electrical specs, protection behavior under fault conditions, SO-8 thermal derating data, and real-world substitution guidance for high-reliability switching designs.

Technical Context

The VNS14NV04 integrates a vertical Power MOSFET with analog gate drive capability and on-die protection circuitry-including linear current limiting (I_lim = 12 A), thermal shutdown (T_jsh = 170 °C typ), and 40 V drain-source clamp-enabling robust operation without external snubbers or current-sense resistors. Its input pin serves dual roles: gate control during normal operation and fault-sink path (I_gf = 10–20 mA) during overtemperature events.

Unlike standard MOSFETs, it draws only 100–150 µA quiescent current (I_ISS) at VIN = 5 V and supports TTL-level logic drive. The SO-8 package provides 90 °C/W junction-to-ambient thermal resistance on minimal copper (0.5 cm²), with built-in ESD protection (4 kV HBM, 16.5 kV output-pin CDM).

Key Specifications

Pinout & Package

SO-8 surface-mount package (ECOPACK® compliant, lead-free); 8-pin layout with exposed drain pad for thermal enhancement and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VNS14NV04, STSPIN250 offers lower on-resistance but lacks critical protection features for harsh environments, while IPS1032H trades off speed and efficiency for wider voltage tolerance-making VNS14NV04 optimal for 12–24 V, 10–12 A, fast-response applications demanding full autonomy.

Availability

VNS14NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, and DC power distribution units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNS14NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and embedded processing solutions.

The VNS14NV04 belongs to ST's OMNIFET II family of protected high-side switches, engineered specifically for replacing mechanical relays and discrete MOSFETs in 12 V/24 V automotive and industrial control systems.

FAQ

Can VNS14NV04 drive inductive loads without external protection?

Yes. Its integrated 40 V drain-source clamp and 400 mJ single-pulse avalanche energy rating allow direct connection to solenoids, relays, and small motors without external TVS diodes. The clamp activates before destructive breakdown, absorbing flyback energy within safe SO-8 thermal limits when PCB copper area is ≥0.5 cm².

What happens during thermal shutdown, and how does fault feedback work?

When junction temperature reaches 150–200 °C, the device disables output and sinks 10–20 mA (I_gf) through the IN pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls IN low, signaling fault; if driven high-impedance, IN falls to 0 V passively. Output resumes automatically after junction cools ≥15 °C below shutdown threshold.

Is VNS14NV04 compatible with PWM dimming or analog current control?

Yes. Its "direct access to the gate" feature allows analog voltage (0.5–2.5 V) or PWM signals applied to the IN pin to modulate R_DS(on) linearly, enabling smooth LED dimming or heater current regulation without external op-amps. Gate charge (36.8 nC) ensures compatibility with standard microcontroller outputs.

How does SO-8 thermal performance compare to DPAK/D2PAK variants?

VNS14NV04 (SO-8) has R_thj-amb = 90 °C/W on minimal copper, versus 65 °C/W for DPAK and 52 °C/W for D2PAK. This limits continuous current to ~1.5 A at 25 °C ambient without heatsinking, but remains sufficient for pulsed or thermally managed 12 A peak loads where duty cycle keeps average power low.