STMicroelectronics VNS14NV04TR-E

Overview

VNS14NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected Power MOSFET in SO-8 package, designed as a robust replacement for standard power MOSFETs in DC–50 kHz switching applications. It features 35 mΩ R_DS(on) at V_IN = 5 V and I_D = 7 A, 12 A linear current limit, 40 V drain-source clamp voltage, and integrated thermal shutdown at 150–200 °C - enabling reliable load switching in automotive body control modules and industrial PLC outputs.

For engineers reviewing the VNS14NV04TR-E datasheet, VNS14NV04TR-E pinout, VNS14NV04TR-E application, or VNS14NV04TR-E equivalent, key selection criteria include its diagnostic feedback via input pin, direct gate access for analog driving, ESD robustness (4 kV HBM), and compatibility with TTL logic-level drive - all critical for fault-tolerant high-side/low-side switch design in harsh environments.

Technical Context

The VNS14NV04TR-E integrates VIPower™ M0 technology to embed protection logic directly into the power stage: linear current limiting operates independently of input voltage, while overtemperature shutdown (T_jsh = 150–200 °C) and reset (T_jrs = 135 °C) are sensed at the power die for fast response. Fault indication is delivered via sink current (I_gf = 10–20 mA) on the input pin during thermal events.

Its SO-8 package supports surface-mount assembly with dual drain-source pins for low-inductance layout and thermal coupling to PCB copper. The device's unclamped inductive switching capability (E_as = 400 mJ) and 300 ns reverse recovery time (t_rr) enable safe demagnetization in relay and solenoid drivers without external snubbers.

Key Specifications

Pinout & Package

SO-8 package (8-pin small outline integrated circuit) with exposed drain pad for enhanced thermal performance; pins 1–4 and 6–8 form dual-source/drain paths, pin 5 is input (gate control), and pin 8 is ground reference for internal sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected power switch applications.

Compared with STSPIN250TR and IPS1021HTR, the VNS14NV04TR-E uniquely combines 12 A current limit, 35 mΩ conduction resistance, and diagnostic sink current in SO-8 - making it optimal for mid-power automotive and industrial switches requiring both robustness and observability.

Availability

VNS14NV04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, smart lighting drivers, and medical equipment power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for VNS14NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The OMNIFET II product line delivers fully autoprotected power switches targeting harsh-environment applications where reliability, diagnostic capability, and integration reduce system-level protection overhead.

FAQ

What is the maximum continuous drain current for VNS14NV04TR-E under typical PCB conditions?

The device supports up to 7 A continuous drain current at T_j = 25 °C with SO-8 mounted on a standard FR4 board (0.14 cm² copper). Derating applies above 25 °C ambient; at 70 °C, max continuous current drops to ~3.5 A based on R_thj-amb = 90 °C/W and P_tot = 4.6 W.

Can VNS14NV04TR-E be used as a high-side switch?

Yes - the SO-8 pinout and internal architecture support high-side configuration. Pin 5 (IN) controls the gate, while pins 1–4/6–8 connect to load and supply rail. External bootstrap or charge-pump circuitry is not required, as the device operates with referenced ground sensing.

How does the diagnostic feedback function during thermal shutdown?

When junction temperature exceeds T_jsh (150–200 °C), the device sinks 10–20 mA through pin 5. If driven by a low-impedance source (e.g., MCU GPIO with pull-up), this pulls pin 5 low; if driven high-impedance, pin 5 collapses to ~0 V - both states detectable as fault signals without additional circuitry.

Is external clamping required when driving inductive loads?

No - the integrated 40 V drain-source clamp (V_CLAMP) and 400 mJ avalanche energy rating protect against inductive kickback in typical 12 V/24 V systems. External clamping is only needed for loads exceeding 45 V peak or repetitive high-energy transients beyond E_as limits.