STMicroelectronics VNS1NV04DP-E

Overview

VNS1NV04DP-E from STMicroelectronics is a dual-channel OMNIFET II fully autoprotected high-side power switch in SO-8 package, integrating two VIPower™ M0-3 monolithic chips. It delivers 1.7 A linear current limiting per channel, 40 V drain-source clamp voltage, and 250 mΩ R_DS(on) at 5 V input, enabling robust DC–50 kHz switching in automotive body control modules and industrial I/O drivers.

For engineers reviewing the VNS1NV04DP-E datasheet, VNS1NV04DP-E pinout, VNS1NV04DP-E application, or VNS1NV04DP-E equivalent, key selection criteria include fault feedback via input pin voltage, thermal shutdown at 150–200 °C, diagnostic sink current (10–20 mA), and compatibility with TTL-level drive without external gate resistors.

Technical Context

The device implements dual independent high-side switches with integrated linear current limiters, overvoltage clamps, and junction temperature sensing-each channel operates autonomously with shared thermal protection logic. Input pin serves both gate drive and bidirectional status signaling: normal operation draws only 100–150 µA, while fault conditions sink 10–20 mA to indicate overtemperature or short circuit.

Protection activation is hardware-based and voltage-independent: current limiting engages at 1.7 A (typ.), clamp triggers at 36 V threshold (40 V nominal), and thermal shutdown occurs between 150–200 °C with automatic reset at ~135 °C. The SO-8 package supports 4 W total dissipation at T_c = 25 °C with R_thj-lead = 30 °C/W per channel.

Key Specifications

Pinout & Package

SO-8 surface-mount package with standard footprint (JEDEC MS-012AC), 1.27 mm pitch, and exposed thermal pad for enhanced heat dissipation. Pin 1 marked by notch or dot; pins arranged in two rows of four.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with STSPIN250 and VND5E025AKTR-E, the VNS1NV04DP-E uniquely combines dual-channel integration, linear current limiting with 2 µs step response, and bidirectional input pin functionality-making it optimal for space-constrained, fault-aware systems requiring minimal external components.

Availability

VNS1NV04DP-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, smart HVAC actuator control, and medical power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNS1NV04DP-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.

The OMNIFET II product line targets robust high-side switching in harsh environments, emphasizing integrated protection, diagnostic capability, and drop-in replacement for discrete MOSFET solutions in automotive and industrial control.

FAQ

What is the maximum continuous drain current per channel?

The VNS1NV04DP-E supports 1.7 A typical continuous drain current per channel under normal operating conditions (T_j ≤ 150 °C). Absolute maximum rating is internally limited; actual sustained current depends on PCB copper area and ambient temperature-derating curves show 1.2 A at 85 °C case temperature with 0.8 cm² copper.

Can the input pin be used for both driving and fault detection simultaneously?

Yes. During normal operation, the input pin draws only 100–150 µA to drive the internal gate. Under thermal fault, it actively sinks 10–20 mA, pulling the pin voltage toward ground if driven by a high-impedance source-or generating a detectable voltage drop across a series resistor if driven by a low-impedance source.

Does this device require an external flyback diode when driving inductive loads?

No external flyback diode is required. The integrated overvoltage clamp (40 V nominal) and 55 mJ single-pulse avalanche energy rating protect against inductive kickback. However, for loads exceeding 55 mJ or repetitive switching into highly inductive loads, an external diode remains recommended for long-term reliability.

Is the SO-8 package thermally enhanced?

The SO-8 package uses standard JEDEC MS-012AC dimensions with no exposed pad; thermal performance relies on PCB copper area. With 0.8 cm² of 35 µm Cu on FR4, R_thj-amb is ~60 °C/W. For higher power, use multiple thermal vias under pins 2, 4, and 7 to connect to inner ground planes and reduce junction-to-ambient resistance.