STMicroelectronics VNS1NV04-E

Overview

VNS1NV04 from STMicroelectronics is a fully autoprotected single-channel high-side Power MOSFET switch in SO-8 package, featuring 250 mΩ R_DS(on), 1.7 A linear current limit, 40 V drain-source clamp voltage, and integrated thermal shutdown - designed for robust DC–50 kHz switching in automotive body control modules, industrial PLC outputs, and smart lighting drivers.

For engineers reviewing the VNS1NV04 datasheet, VNS1NV04 pinout, VNS1NV04 application, or VNS1NV04 equivalent, this page delivers verified electrical specs, fault feedback behavior, SO-8 thermal derating curves, and real-world protection timing (e.g., 2.0 µs current-limit step response, 170 °C overtemperature shutdown), enabling accurate system-level reliability analysis and drive-stage design.

Technical Context

The VNS1NV04 implements ST's VIPower® M0-3 technology with direct gate access for analog driving, combining a rugged N-channel vertical power MOSFET with monolithic linear current limiting, overvoltage clamping, and junction temperature sensing. Its input pin serves dual roles: gate control and diagnostic feedback via sink current during fault conditions.

Protection logic operates independently of input voltage - thermal shutdown triggers at 150–200 °C (typ. 175 °C), current limiting activates at 1.7 A (typ.) regardless of VIN, and overvoltage clamp engages at 40 V (min.) to absorb inductive energy without external components.

Key Specifications

Pinout & Package

SO-8 package (8-pin surface-mount) with exposed drain pad for thermal enhancement; pin 1–8 arranged per standard SO-8 footprint (pin 1 = INPUT, pins 2–4 = DRAIN, pin 5 = SOURCE, pins 6–8 = DRAIN).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with VND1NV04-E, the VNS1NV04 offers smaller SO-8 footprint and lower component count for space-constrained boards, while IPS1021R trades simplicity for advanced digital control - making VNS1NV04 optimal for cost-sensitive, analog-driven high-reliability switching where diagnostics are limited to pin-level fault signaling.

Availability

VNS1NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and smart lighting drivers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for VNS1NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing capabilities.

The VNS1NV04 belongs to ST's OMNIFET II family of autoprotected high-side switches, engineered specifically for replacing discrete power MOSFETs in harsh-environment DC–50 kHz switching applications with minimal external components.

FAQ

What is the maximum continuous drain current for VNS1NV04 under typical PCB conditions?

The VNS1NV04 supports up to 1.7 A continuous drain current under standard conditions: T_c = 25 °C, mounted on 50 mm² FR4 copper, with R_thj-amb = 54 °C/W. At elevated ambient temperatures or reduced copper area, derating applies - e.g., 1.2 A at 70 °C ambient per Figure 11 in Doc ID 7381 Rev 4.

Can VNS1NV04 be used in PWM applications above 10 kHz?

Yes - the VNS1NV04 is rated for operation up to 50 kHz with specified switching times: t_d(on) = 70 ns, t_r = 170 ns, t_d(off) = 350 ns, and t_f = 200 ns (R_gen = 330 Ω). Its linear current limiter remains active across this range, ensuring safe operation during duty-cycle transients.

How does the diagnostic feedback mechanism work during thermal fault?

When junction temperature exceeds T_jsh (150–200 °C), the VNS1NV04 sinks 10–20 mA (typ. 15 mA) through the INPUT pin. This current flows into the driving source - if driven by a microcontroller GPIO with pull-up, it pulls the pin low, signaling fault without extra hardware.

Is an external flyback diode required when driving inductive loads?

No - the integrated 40 V drain-source clamp and 55 mJ avalanche energy rating allow safe operation with inductive loads like relays and solenoids without external flyback diodes. However, for loads exceeding 55 mJ single-pulse energy or repetitive high-energy switching, external clamping is recommended.