STMicroelectronics VNS1NV04TR-E

Overview

VNS1NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected high-side Power MOSFET in SO-8 package, designed for DC–50 kHz switching in industrial and automotive load control. It features 250 mΩ R_DS(on), 1.7 A linear current limit, 40 V drain-source clamp voltage, integrated thermal shutdown, and diagnostic feedback via input pin - enabling robust replacement of discrete MOSFETs in solenoid, relay, and LED driver circuits.

For engineers reviewing the VNS1NV04TR-E datasheet, VNS1NV04TR-E pinout, VNS1NV04TR-E application, or VNS1NV04TR-E equivalent, this page delivers verified electrical specs, SO-8 terminal mapping, protection behavior under fault conditions, and validated alternatives for high-side switch design with built-in diagnostics and ruggedness.

Technical Context

The VNS1NV04TR-E integrates a VIPower® M0-3 process Power MOSFET with analog gate drive capability, allowing direct connection to microcontroller GPIO without external level-shifting. Its linear current limiter operates independently of input voltage and maintains constant ID at 1.7 A (typ) during overload, while internal overvoltage clamp limits V_DS to 40 V (min) during inductive flyback.

Thermal shutdown triggers at 150–200 °C junction temperature, with automatic restart after ~15 °C hysteresis. Fault detection is implemented via sink current (10–20 mA) on the INPUT pin during overtemperature events, enabling real-time system-level diagnostics without additional sensors.

Key Specifications

Pinout & Package

SO-8 package (8-pin surface-mount), thermally enhanced layout with four DRAIN pins tied internally for low R_thj-case (3.5 °C/W) and improved power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN250TR and VND5E025AKTR-E, the VNS1NV04TR-E uniquely balances 1.7 A linear current limiting, 40 V clamp, and analog gate drive in SO-8 - making it optimal for mid-power diagnostic-aware switching where precision overload control and inductive ruggedness are essential.

Availability

VNS1NV04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, and smart appliance motor interfaces requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for VNS1NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and embedded processing solutions.

The VNS1NV04TR-E belongs to ST's OMNIFET II family of protected high-side switches, engineered specifically for replacing discrete MOSFETs in harsh-environment load control applications with integrated diagnostics and ruggedness.

FAQ

What is the maximum continuous drain current for VNS1NV04TR-E under typical PCB conditions?

The VNS1NV04TR-E supports 1.7 A continuous drain current (I_LIM) under normal operation, limited by its internal linear current limiter - not by package thermal limits. With SO-8 mounted on a standard FR4 board (50 mm² Cu), its thermal resistance (R_thj-amb = 54 °C/W) allows ~1.2 A continuous conduction before reaching thermal shutdown, but the device enforces 1.7 A regardless of ambient conditions.

Can VNS1NV04TR-E be driven directly from a 3.3 V microcontroller GPIO?

Yes - the VNS1NV04TR-E has a low input threshold (V_INTH = 0.5–2.5 V) and draws only 100–150 µA from the input pin, making it fully compatible with 3.3 V logic. No level shifter or external pull-up is required, and the device remains fully functional across the entire 0.5–5 V input range.

How does the diagnostic feedback mechanism work during overtemperature events?

When junction temperature exceeds T_jsh (150–200 °C), the VNS1NV04TR-E actively sinks 10–20 mA through the INPUT pin. This current can be detected by monitoring voltage drop across a series resistor (e.g., 1 kΩ → 10–20 V drop), triggering an interrupt or flag in the host MCU without optical isolation or additional circuitry.

Is external clamping required when driving inductive loads?

No - the VNS1NV04TR-E integrates an internal overvoltage clamp with V_CLAMP = 40 V (min), sufficient to suppress flyback transients from typical 12 V/24 V solenoids and relays. External clamping is unnecessary unless the expected inductive energy exceeds the device's single-pulse avalanche rating (E_as = 55 mJ).