STMicroelectronics VNS3NV04D13TR

Overview

VNS3NV04D13TR from STMicroelectronics is a dual-channel fully autoprotected power MOSFET in SO-8 package, integrating linear current limiting (3.5 A per channel), thermal shutdown (150–200 °C), and 40 V drain-source clamp. It replaces standard N-channel MOSFETs in DC–50 kHz switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNS3NV04D13TR datasheet, VNS3NV04D13TR pinout, VNS3NV04D13TR application, or VNS3NV04D13TR equivalent, this device offers diagnostic feedback via input pin voltage drop, direct gate access for analog driving, and ESD protection up to 16.5 kV on output pins-critical for robust load-switching designs in harsh environments.

Technical Context

The VNS3NV04D13TR integrates two independent OMNIFET II chips using ST's VIPower M0-3 technology, each featuring monolithic overvoltage clamp, linear current limiter, and junction temperature sensing. Protection activation is autonomous-no external circuitry required-and fault detection occurs via input pin sink current (10–20 mA) during overtemperature events.

Each channel operates with 120 mΩ R_DS(on) at V_IN = 5 V and I_D = 1.5 A, supports reverse DC output current of –5.5 A, and delivers 100 mJ single-pulse avalanche energy. Input threshold voltage is 0.5–2.5 V, enabling TTL-level compatibility without level-shifting.

Key Specifications

Pinout & Package

Package: SO-8 (standard surface-mount, 1.27 mm pitch, 4.8 × 6.2 mm body). Pin numbering follows top-view layout with pin 1 at bottom-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switch applications.

Compared with STVN3A04D13TR, VNS3NV04D13TR doubles channel count in same footprint but trades off SPI diagnostics; versus IPS1021H, it delivers lower R_DS(on) and analog drive flexibility at the expense of digital interface capability.

Availability

VNS3NV04D13TR is available at Aetrix Electronics and suitable for automotive body electronics, industrial valve control, smart lighting systems, and appliance motor starters requiring stable component supply across multi-year production cycles.

Supply support for VNS3NV04D13TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The OMNIFET II product line targets robust, self-protected power switching in harsh environments-specifically engineered to replace discrete MOSFET + protection circuits in automotive and industrial load-control applications.

FAQ

Can VNS3NV04D13TR drive inductive loads without an external flyback diode?

Yes. Its integrated 40 V drain-source clamp and 100 mJ single-pulse avalanche energy rating allow safe switching of relays, solenoids, and small motors without external flyback diodes in most 12–24 V DC applications. The clamp activates before destructive voltage peaks occur, dissipating energy internally within safe thermal limits.

How does diagnostic feedback work on the INPUT pins?

During overtemperature shutdown, each channel sinks 10–20 mA through its INPUT pin. If driven by a low-impedance source (e.g., microcontroller GPIO), this pulls the pin voltage toward 0 V, signaling fault. With high-impedance drive, the pin collapses passively-no external pull-down or monitoring IC is required for basic fault detection.

What is the maximum continuous drain current per channel?

The linear current limiter sets a typical I_lim of 3.5 A per channel under steady-state conditions. This is not a peak rating-it is actively enforced regardless of V_IN or load resistance. Sustained operation at I_lim requires adequate PCB copper (≥50 mm² per channel) to maintain T_j below 150 °C per thermal data.

Is VNS3NV04D13TR suitable for PWM frequencies above 50 kHz?

No. The datasheet specifies reliable operation up to 50 kHz due to internal protection response times and thermal limitations. At higher frequencies, cumulative switching losses and reduced time for thermal recovery increase risk of false overtemperature trips or accelerated wear. For >50 kHz, consider dedicated high-speed gate drivers with discrete protected FETs.