STMicroelectronics VNS3NV04DP-E

Overview

VNS3NV04DP-E from STMicroelectronics is an automotive-grade dual-channel OMNIFET II fully autoprotected Power MOSFET in SO-8 package, designed for DC–50 kHz switching of resistive, capacitive, and inductive loads per EN 60947-5-1. It features linear current limitation (3.5 A typ), thermal shutdown (175 °C typ), 40 V drain-source clamp, 120 mΩ R_DS(on) per channel at 25 °C, and diagnostic feedback via input pin - used in body control modules, seat/mirror actuators, and LED lighting drivers.

For engineers reviewing the VNS3NV04DP-E datasheet, VNS3NV04DP-E pinout, VNS3NV04DP-E application, or VNS3NV04DP-E equivalent, this page delivers verified electrical specs, SO-8 terminal mapping, protection behavior under fault conditions, and validated alternatives for AEC-Q100-compliant power switching designs.

Technical Context

The VNS3NV04DP-E integrates two monolithic VIPower M0-3 OMNIFET II chips in a single SO-8 package, enabling independent high-side switching with analog gate drive capability. Each channel implements autonomous protection: overvoltage clamping at 45 V (typ), linear current limiting active above 3.5 A, and junction temperature sensing triggering shutdown at 175 °C (typ) with automatic restart at ~135 °C.

Diagnostic status is communicated through the INPUT pin: during overtemperature fault, it sinks 10–20 mA (I_gf) to signal failure; under normal operation, it draws only 100–150 µA (I_ISS). The device supports TTL-level logic drive and includes ESD protection rated at 4 kV HBM and 16.5 kV output-pin CDM.

Key Specifications

Pinout & Package

SO-8 package (ECOPACK, RoHS-compliant, lead-free); 1.27 mm pitch; 4.9 × 6.0 mm body; 1.75 mm height; thermal pad on underside (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel protected high-side switch applications.

Compared with STSPIN32F0B, VNS3NV04DP-E delivers simpler, lower-cost protection for static loads without firmware dependency; versus BTS724G, it halves board area and enables synchronized dual-channel diagnostics - critical for space-constrained automotive modules.

Availability

VNS3NV04DP-E is available at Aetrix Electronics and suitable for automotive body electronics, lighting control systems, and seat/mirror actuation requiring stable component supply with AEC-Q100 compliance and long-term production continuity.

Supply support for VNS3NV04DP-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and rigorous quality certification.

The OMNIFET II product line targets automotive power distribution and load driving, integrating protection, diagnostics, and ruggedized packaging to replace discrete MOSFET + protection circuits in harsh-environment applications.

FAQ

What is the maximum continuous drain current per channel under typical operating conditions?

The VNS3NV04DP-E provides a typical current limit of 3.5 A per channel (I_LIM) at V_IN = 5 V and V_DS = 13 V, with absolute maximum ratings supporting short-duration pulses up to 7 A. Continuous operation depends on PCB thermal design: with 50 mm² copper pour, derating begins above 1.5 A at 100 °C ambient per Figure 9 in DS7131 Rev 4.

Can the VNS3NV04DP-E be used in a high-side configuration with ground-referenced loads?

Yes - the device is explicitly designed as a high-side switch. SOURCE pins connect to system ground, while DRAIN pins deliver switched 12 V/24 V to the load's positive terminal. This configuration enables true load-side disconnection and simplifies fault detection via current-limiting behavior and input-pin diagnostic sinking.

How does the diagnostic feedback function during overtemperature events?

When junction temperature exceeds 175 °C (typ), the device activates a 10–20 mA sink current (I_gf) on the corresponding INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO with <1 kΩ series resistance), this pulls the input voltage low, signaling fault. High-impedance drivers see the pin fall to 0 V - still detectable as logic-low without additional circuitry.

Is external heat sinking required for standard automotive ambient temperatures?

No external heat sink is required if mounted on a standard FR4 PCB with ≥50 mm² of 35 µm-thick copper connected to all DRAIN and SOURCE pins per channel. Thermal resistance junction-to-ambient is 80 °C/W under those conditions (Table 5), allowing ~1.5 A continuous current at 85 °C ambient before reaching 150 °C junction limit - sufficient for most BCM and lighting loads.