STMicroelectronics VNS3NV04DPTR-E

Overview

VNS3NV04DPTR-E from STMicroelectronics is an AEC-Q100 qualified, dual-channel automotive OMNIFET II fully autoprotected Power MOSFET in SO-8 package, designed to drive DC–13 V resistive, capacitive, and inductive loads per EN 60947-5-1. It features linear current limitation (3.5 A typ), thermal shutdown (150–200 °C), and integrated overvoltage clamp (40 V). Used in body control modules for seat/mirror actuation and lighting control.

For engineers reviewing the VNS3NV04DPTR-E datasheet, VNS3NV04DPTR-E pinout, VNS3NV04DPTR-E application, or VNS3NV04DPTR-E equivalent, key selection criteria include channel independence, diagnostic feedback via input pin, R_DS(on) ≤ 120 mΩ at 1.5 A/25 °C, fault-sink capability (10–20 mA), and compatibility with TTL-level driving.

Technical Context

The device integrates two monolithic VIPower M0-3 OMNIFET II chips in a single SO-8 package, enabling independent high-side switching with analog gate access. Each channel operates up to 50 kHz with built-in protection: linear current limiting (I_LIM = 3.5 A typ), clamped V_DS (40 V), and thermal shutdown triggered at T_j ≥ 150 °C.

Fault status is communicated through the INPUT pin: under overtemperature, it sinks 10–20 mA (I_gf) to signal shutdown; if drive impedance is high, the pin collapses to 0 V without affecting operation. ESD robustness exceeds 4 kV HBM and 16.5 kV output-pin CDM.

Key Specifications

Pinout & Package

SO-8 package (4.9 × 6.0 × 1.75 mm), ECOPACK® compliant, lead-free and RoHS-compliant. Dual-channel layout with isolated drain/source terminals per channel and shared input pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel protected high-side switch applications.

Compared with VNS3NV04DPTR-E, STSPIN32F0B adds processing intelligence but removes integrated power stage and clamp protection, while VNS7NV04PTR-E offers identical protection and performance in half the channel count-making it ideal for modular design reuse without feature compromise.

Availability

VNS3NV04DPTR-E is available at Aetrix Electronics and suitable for automotive body electronics, seat/mirror control systems, and LED lighting modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNS3NV04DPTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with broad IP and manufacturing scale.

The OMNIFET II product line targets automotive-grade protected high-side switches, delivering integrated protection, diagnostics, and ruggedness for 12 V DC load control in harsh vehicle environments.

FAQ

What is the maximum continuous drain current per channel?

The VNS3NV04DPTR-E does not specify a fixed maximum continuous drain current due to thermal dependency. Its linear current limiter sets I_LIM = 3.5 A (typ) at V_IN = 5 V and V_DS = 13 V. Sustained operation above this level triggers thermal shutdown. Actual usable current depends on PCB copper area, ambient temperature, and airflow-derating curves show 1.5 A at T_c = 100 °C with standard FR4 layout.

Can the device drive inductive loads without external flyback diodes?

Yes-the integrated overvoltage clamp (V_CLAMP = 40 V) safely absorbs inductive energy during turn-off, eliminating the need for external flyback diodes in most 12 V automotive applications. However, for high-energy inductors (e.g., large solenoids), external clamping may still be recommended to limit peak power dissipation within the device's 4 W total package limit.

How is fault condition detected on the INPUT pin?

During overtemperature shutdown, the device actively sinks 10–20 mA (I_gf) through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the pin voltage down, signaling fault. If drive impedance is high (>10 kΩ), the pin collapses to 0 V-still indicating fault without requiring active current sourcing from the controller.

Is the SO-8 package thermally adequate for 3.5 A continuous operation?

No-SO-8 has R_thj-amb = 80 °C/W on standard FR4. At 3.5 A and R_DS(on) = 120 mΩ, power dissipation is ~1.47 W, raising junction temperature by ~118 °C above ambient. Continuous 3.5 A operation requires significant copper pour, thermal vias, or forced cooling. The device is intended for pulsed or current-limited duty, not steady-state 3.5 A conduction.