STMicroelectronics VNS3NV04-E

Overview

VNS3NV04-E from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in VIPower™ M0-3 technology, designed as a robust replacement for standard N-channel MOSFETs in DC–50 kHz switching applications. It features integrated linear current limitation (3.5 A typ.), thermal shutdown (170 °C typical), 40 V drain-source clamp, 120 mΩ R_DS(on) at 5 V gate drive, and diagnostic feedback via the input pin - deployed in automotive body control modules and industrial load switching.

For engineers reviewing the VNS3NV04-E datasheet, VNS3NV04-E pinout, VNS3NV04-E application, or VNS3NV04-E equivalent, this page delivers verified electrical specs, SO-8 package layout, protection behavior under short-circuit/overtemperature conditions, and real-world design implications of its analog gate access and fault-sink current capability.

Technical Context

The VNS3NV04-E integrates a high-voltage DMOS power stage with on-chip protection logic including a voltage-controlled overvoltage clamp (45 V typ.), linear current limiter (I_lim = 3.5–7 A), and junction temperature sensor triggering shutdown at 150–200 °C. Its input pin directly controls the internal gate but draws only 100–150 µA supply current during normal operation.

Unlike discrete MOSFETs, it provides status feedback: under overtemperature fault, it sinks 10–20 mA (I_gf) through the input pin to signal failure - requiring no external sense circuitry. The device operates up to 50 kHz with controlled dI/dt (4.7 A/µs) and supports TTL-level input drive without level-shifting.

Key Specifications

Pinout & Package

SO-8 package (8-pin plastic small outline) with exposed drain pad for thermal performance. Pin 1–4 and 6–8 are DRAIN terminals; Pin 5 is SOURCE; Pin 1 is INPUT (gate control and fault feedback node).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected Power MOSFET applications.

Compared with STP3NK60ZFP, VNS3NV04-E reduces design complexity by embedding protection functions; versus IPS1021H, it offers higher current rating and analog control flexibility at the expense of digital configurability.

Availability

VNS3NV04-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC outputs, smart lighting drivers, and appliance motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNS3NV04-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The VNS3NV04-E belongs to ST's OMNIFET II family of protected Power MOSFETs, engineered specifically for robust, space-constrained load switching in harsh environments - emphasizing reliability over raw performance.

FAQ

What is the maximum continuous drain current for VNS3NV04-E?

The VNS3NV04-E features a linear current limit of 3.5 A typical (5 A maximum) under normal operating conditions. This is not a pulsed rating but a sustained current limit enforced by on-chip circuitry - independent of gate voltage and active across the full operating temperature range (-40 °C to 150 °C).

Can VNS3NV04-E be used in high-side switching configurations?

No - the VNS3NV04-E is optimized for low-side switching only. Its SOURCE terminal is internally tied to the substrate reference, and the INPUT pin is referenced to SOURCE. High-side use would require level-shifting circuitry and violates the device's absolute maximum ratings for input-to-source voltage.

How does the diagnostic feedback function during thermal shutdown?

When junction temperature exceeds T_jsh (150–200 °C), the device actively sinks 10–20 mA (I_gf) through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO), this pulls the input voltage low; if driven high-impedance, the pin collapses to 0 V - both states detectable as a fault flag without additional components.

Is the VNS3NV04-E RoHS-compliant and halogen-free?

Yes - the VNS3NV04-E is manufactured in ST's ECOPACK®-compliant SO-8 package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The "-E" suffix explicitly denotes lead-free, halogen-free packaging per ST's standard product coding.