STMicroelectronics VNV10N07-E

Overview

VNV10N07-E from STMicroelectronics is a fully autoprotected monolithic power MOSFET in the OMNIFET® family, fabricated using VIPower M0 technology. It functions as a rugged, self-protected high-side switch with 70 V drain-source voltage rating, 0.1 Ω R_DS(on) at 5 A, and integrated linear current limiting (10 A), thermal shutdown (150 °C), and overvoltage clamp (70 V). It is used in industrial DC motor control, solenoid drivers, and lighting ballasts where fault resilience is critical.

For engineers reviewing the VNV10N07-E datasheet, VNV10N07-E pinout, VNV10N07-E application, or VNV10N07-E equivalent, key selection criteria include its diagnostic feedback via input pin, direct gate access for analog driving, ESD protection (2000 V HBM), and compatibility with TTL logic-critical for robust load switching in harsh environments.

Technical Context

The VNV10N07-E integrates protection circuitry directly on-die: an overvoltage clamp triggers at 55 V threshold and clamps at 70 V (typ.), while linear current limiting activates at 7–10 A depending on input voltage. Thermal shutdown engages at ≥150 °C junction temperature and resets autonomously at ≤135 °C.

Fault detection is implemented via status feedback: during overtemperature or short-circuit events, the input pin is internally pulled to ground through ~100 Ω, enabling simple voltage-level monitoring. The device supports DC–50 kHz switching and allows direct analog gate drive due to accessible internal gate node.

Key Specifications

Pinout & Package

VNV10N07-E is housed in PowerSO-10 package (JEDEC TO-263 variant), with exposed drain tab for thermal dissipation and optimized layout for high-current paths. Pin 1–2–4–5 are SOURCE terminals; pins 6–7–8–9–10 are INPUT (gate-connected); the metal tab is DRAIN (internally connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN220 and VNB35N07, the VNV10N07-E uniquely balances 10 A capability, compact PowerSO-10 packaging, and analog-friendly input-pin diagnostics-making it optimal for mid-power industrial I/O modules where space, simplicity, and fault visibility are prioritized over digital control or ultra-high current.

Availability

VNV10N07-E is available at Aetrix Electronics and suitable for industrial motor control, automated valve actuation, and LED constant-current driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for VNV10N07-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The OMNIFET® product line was developed specifically for industrial and building automation applications demanding high reliability, integrated protection, and simplified system-level fault management-replacing legacy discrete MOSFET + protection IC combinations.

FAQ

What is the maximum continuous drain current for VNV10N07-E under typical PCB cooling?

The VNV10N07-E delivers 10 A continuous drain current when mounted on a standard 4-layer PCB with 10 cm² copper pour on the drain tab, assuming case temperature ≤80 °C. Its 2.5 °C/W junction-to-case thermal resistance enables this rating without forced air, but derating applies above 85 °C ambient due to internal thermal shutdown at 150 °C junction temperature.

Can VNV10N07-E be used in parallel for higher current capacity?

No-VNV10N07-E is not designed for paralleling. Its internal current-limiting circuit responds to local die temperature and current, causing uneven sharing and potential thermal runaway. ST recommends using a single higher-rated device like VNB35N07 instead of paralleling multiple VNV10N07-E units for >10 A applications.

How does the diagnostic feedback signal behave during overtemperature fault?

During overtemperature fault, the internal protection circuit disconnects the input pin from the gate and pulls it to ground via a ~100 Ω resistor. This causes the input pin voltage to drop to <0.4 V when driven with a typical 10 kΩ pull-up, enabling reliable detection using a microcontroller GPIO or comparator without additional circuitry.

Is external flyback diode required when driving inductive loads?

No external flyback diode is required for basic operation-the integrated 70 V overvoltage clamp handles energy recirculation during turn-off. However, for high-energy inductive loads (e.g., >100 mJ), an external Schottky diode across the load is recommended to reduce clamp stress and improve efficiency, as the internal clamp dissipates energy as heat in the die.