STMicroelectronics VNV20N07-E

Overview

VNV20N07-E from STMicroelectronics is a fully autoprotected monolithic N-channel Power MOSFET in the OMNIFET family, designed as a robust replacement for standard power MOSFETs in DC–50 kHz switching applications. It features 70 V drain-source clamp voltage, 0.05 Ω R_DS(on) at V_IN = 10 V, 20 A current limit, integrated thermal shutdown, and diagnostic feedback via the input pin - used in industrial motor control, solenoid drivers, and automotive body electronics.

For engineers reviewing the VNV20N07-E datasheet, VNV20N07-E pinout, VNV20N07-E application, or VNV20N07-E equivalent, this device offers verified linear current limiting, clamped overvoltage protection, fault-sink current signaling, and direct gate access for analog driving - critical for high-reliability load-switching designs with inductive loads.

Technical Context

The VNV20N07-E integrates a power MOSFET with on-die protection circuitry including a 70 V internally clamped drain-source path, linear current limiter (I_lim = 20 A at V_IN = 10 V), and junction temperature sensing that triggers shutdown at ≥150 °C with automatic restart at ≤135 °C. Its input pin serves dual roles: gate drive interface and fault status indicator via 100 Ω pull-down during overtemperature events.

It supports TTL-compatible logic-level driving and enables analog gate control, with ESD protection rated to 2000 V (HBM). The device operates up to 50 kHz in resistive/inductive loads and delivers 0.95 J single-pulse avalanche energy at V_DD = 20 V - confirming ruggedness in unclamped inductive switching.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Thermal resistance R_thj-case = 3.75 °C/W, R_thj-amb = 62.5 °C/W. Mounting requires soldering the drain tab to PCB copper for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switching applications.

Compared with STSPIN840 and IPS1021H, the VNV20N07-E uniquely combines 20 A current capability, 70 V clamping, and PowerSO-10 thermal performance - making it optimal for high-energy inductive switching where reliability under sustained overload is non-negotiable.

Availability

VNV20N07-E is available at Aetrix Electronics and suitable for industrial motor control, solenoid actuation, and automotive body electronics requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for VNV20N07-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive-grade ICs with vertical manufacturing capabilities.

The OMNIFET product line was developed to replace discrete MOSFET + protection circuits in harsh industrial and automotive environments - delivering integrated safety, diagnostics, and ruggedness without design complexity.

FAQ

What is the maximum operating frequency for VNV20N07-E?

The VNV20N07-E is characterized for reliable operation up to 50 kHz in resistive and inductive switching applications. Its 60 nC input charge and sub-µs switching times (e.g., 180 ns rise time with 10 Ω gate resistor) support efficient high-frequency PWM control, though thermal limits may constrain sustained duty cycle at full 20 A load.

Can VNV20N07-E be used in high-side configuration only?

Yes - the VNV20N07-E is designed exclusively as a high-side switch. Its source pins are internally tied to ground reference, and the drain tab serves as the output terminal. It cannot function as a low-side switch due to its integrated protection architecture and pinout topology.

How is fault condition detected on the input pin?

During overtemperature or short-circuit faults, the internal protection circuit disconnects the input from the gate and connects it to ground through a 100 Ω resistor. This pulls the input pin voltage to near 0 V, detectable with a comparator or MCU ADC - enabling immediate system-level fault response without additional components.

Does VNV20N07-E require an external flyback diode when driving inductive loads?

No - the integrated 70 V drain-source clamp and 0.95 J avalanche energy rating eliminate the need for an external flyback diode in most 24 V inductive applications. However, for loads exceeding the device's E_AS rating or operating beyond 50 kHz, supplemental clamping may still be advised per system-level stress analysis.