STMicroelectronics VNV28N04TR-E

Overview

VNV28N04TR-E from STMicroelectronics is a fully autoprotected monolithic VIPower M0 smart power MOSFET, functioning as a high-side switch with integrated linear current limiting (28 A), 42 V clamp protection, and thermal shutdown. It replaces standard N-channel MOSFETs in DC–50 kHz inductive load switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNV28N04TR-E datasheet, VNV28N04TR-E pinout, VNV28N04TR-E application, or VNV28N04TR-E equivalent, key selection criteria include its diagnostic feedback via input pin, R_DS(on) of 0.035 Ω at 10 V drive, built-in overvoltage clamping, and compatibility with TTL-level logic driving.

Technical Context

This device integrates a power MOSFET gate driver, linear current limiter, overtemperature sensor, and bidirectional input-source clamp into a single silicon die using ST's VIPower M0 process. Its fault detection relies on voltage monitoring at the INPUT pin, which transitions to ~0 V (via 100 Ω internal sink) during thermal or short-circuit events.

The device operates in linear mode under current limit, enabling controlled energy dissipation during overload-critical for driving inductive loads like relays and valves without external snubbers. Its 42 V internally clamped V_DS and 2.5 J single-pulse avalanche energy rating ensure robustness against unclamped inductive kickback.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Thermal resistance R_thj-case = 1.5 °C/W enables high-power operation with minimal heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side smart switch applications.

Compared with VNV28N04TR-E, IPS1022H offers superior conduction performance but sacrifices diagnostic capability and analog drive flexibility, while VND5E025AK trades power capability for compactness-making VNV28N04TR-E optimal for mid-power, diagnostics-aware designs.

Availability

VNV28N04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, and DC motor starter circuits requiring stable component supply and long-term lifecycle support.

Supply support for VNV28N04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

VNV28N04TR-E belongs to ST's VIPower "OMNIFET" family-engineered specifically for rugged, self-protected high-side switching in harsh environments where reliability, diagnostics, and integration reduce system-level component count.

FAQ

What is the function of the INPUT pin during normal operation and during fault conditions?

During normal operation, the INPUT pin connects directly to the internal MOSFET gate and draws only 250–600 µA to power internal circuitry. During thermal or short-circuit faults, it is disconnected from the gate and actively pulled to ~0 V via a 100 Ω internal resistor, enabling simple GPIO-based fault detection without extra components.

Can VNV28N04TR-E be used in parallel for higher current handling?

No-VNV28N04TR-E is not designed for paralleling. Its linear current limit and thermal shutdown are per-die functions, and mismatched R_DS(on) or thermal coupling would cause uneven current sharing and premature fault triggering. For higher current, use a single higher-rated device like IPS1022H.

Does this device require an external freewheeling diode when driving inductive loads?

No external freewheeling diode is required. The integrated body diode (V_SD = 2 V @ 14 A) and 42 V clamp protection handle inductive flyback energy. However, for fast recovery or low-loss operation in high-frequency PWM, an external Schottky diode may still be added across the load.

What is the maximum recommended PCB copper area for the DRAIN tab to achieve rated thermal performance?

To achieve the specified R_thj-case of 1.5 °C/W, the DRAIN tab must be soldered to ≥400 mm² of 2-oz copper (≥70 µm thick) with ≥4 thermal vias (0.5 mm diameter) connecting to inner or backside ground planes. Smaller copper areas increase thermal resistance and reduce safe operating current.