STMicroelectronics VNV35N07

Overview

VNV35N07 from STMicroelectronics is a fully autoprotected monolithic VIPower M0 smart power MOSFET designed for high-reliability DC–50 kHz switching in automotive and industrial loads. It features 70 V drain-source clamping, 0.028 Ω R_DS(on) at 10 V_IN, 35 A current limit, integrated thermal shutdown (150 °C), and diagnostic feedback via the input pin. It replaces standard MOSFETs in solenoid, relay, and motor control circuits where ruggedness against inductive transients is critical.

For engineers reviewing the VNV35N07 datasheet, VNV35N07 pinout, VNV35N07 application, or VNV35N07 equivalent, key selection criteria include its linear current limiting behavior, fault-sensing capability through the input pin, clamp voltage tolerance under unclamped inductive switching, thermal reset hysteresis (135 °C), and compatibility with TTL-level gate drive despite internal bias current draw.

Technical Context

This device integrates a vertical power MOSFET with on-chip protection circuitry including overvoltage clamp (V_CLAMP = 70 V), linear current limiter (I_LIM = 35 A), and junction temperature sensing with shutdown (T_JSH = 150 °C) and auto-restart (T_JRS = 135 °C). The input pin serves dual roles: gate control during normal operation and fault indicator (pulled to ~0 V via 100 Ω) during thermal or short-circuit events.

It operates as a single-ended high-side switch with direct gate access for analog driving, supports ESD protection (2000 V HBM), and delivers 2.5 J single-pulse avalanche energy (E_AS) at V_DD = 20 V. Its PowerSO-10 package provides low R_thj-case = 1 °C/W, enabling high-power dissipation without external heatsink in moderate-duty cycles.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Thermal resistance: R_thj-case = 1 °C/W, R_thj-amb = 50 °C/W. Mounting requires soldering the drain tab to a large copper area for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart high-side switch applications.

Compared with STSPIN840 and IPS1036H, VNV35N07 offers superior current-handling (35 A), lowest R_DS(on), and highest avalanche energy (2.5 J), making it optimal for high-stress 12–24 V inductive load switching where reliability outweighs integration density.

Availability

VNV35N07 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and motor starter circuits requiring stable component supply across extended product lifecycles.

Supply support for VNV35N07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and smart power technologies.

VNV35N07 belongs to the VIPower M0 family of intelligent power switches, engineered specifically for replacing discrete MOSFETs in harsh-environment DC load control with integrated protection and diagnostics.

FAQ

What is the maximum continuous drain current for VNV35N07?

The device has an internally limited drain current of 35 A under linear current limiting conditions at T_case = 25 °C. Continuous operation at this level requires careful thermal design due to power dissipation in the linear region; actual usable current depends on PCB copper area, ambient temperature, and duty cycle.

How does fault detection work on the input pin?

During thermal shutdown or short-circuit events, the internal protection circuit disconnects the input from the gate and pulls it to ground through a 100 Ω resistor. This causes the input pin voltage to drop to ≈0 V, detectable by any microcontroller GPIO configured as an input with pull-up.

Can VNV35N07 be used in high-frequency PWM applications?

It is rated for DC to 50 kHz operation. At 50 kHz, switching losses become significant due to 100 nC input charge and 600 ns typical turn-off delay; efficiency requires optimized gate drive strength (R_gen ≤ 10 Ω) and thermal management to avoid junction overheating.

Is external clamping diode required when driving inductive loads?

No. The integrated 70 V drain-source clamp eliminates the need for an external flyback diode in most 12–24 V applications. However, for loads exceeding 2.5 J single-pulse avalanche energy or repetitive high-dV/dt conditions, supplemental TVS may still be advised per system-level stress testing.