STMicroelectronics VNV35N07-E

Overview

VNV35N07-E from STMicroelectronics is a fully autoprotected monolithic VIPower M0 high-side power switch, integrating a 70 V, 35 A rated N-channel MOSFET with linear current limiting, thermal shutdown, overvoltage clamp (70 V), diagnostic feedback, and ESD protection. It replaces standard power MOSFETs in DC–50 kHz inductive load switching applications such as automotive body control modules and industrial solenoid drivers.

For engineers reviewing the VNV35N07-E datasheet, VNV35N07-E pinout, VNV35N07-E application, or VNV35N07-E equivalent, key selection criteria include its integrated fault detection via input pin voltage shift, 0.028 Ω R_DS(on) at 10 V gate drive, 150 °C thermal shutdown threshold, and compatibility with TTL-level logic driving.

Technical Context

This device implements a high-side smart power switch architecture with direct gate access for analog driving and built-in protection circuits co-located on the same die. Its linear current limiter activates at 25–45 A depending on input voltage, and fault signaling occurs via 100 Ω pull-down of the INPUT pin to ground during overtemperature or short-circuit events.

The integrated 70 V avalanche-rated clamp enables robust unclamped inductive switching, while the 100 nC total input charge and 60 A/µs turn-on di/dt support fast, controlled transitions into inductive loads without external snubbers in many cases.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, exposed drain tab). Pin configuration per official STMicroelectronics mechanical drawing P011P6/C: INPUT pins are 6, 7, 8, 9, 10; SOURCE pins are 1, 2, 4, 5; DRAIN connects to the metal tab (thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side protected switch applications.

Compared with STSPIN250 and IPS1025H, the VNV35N07-E delivers superior unclamped inductive energy handling (2.5 J) and higher absolute current capability (35 A), making it uniquely suited for legacy 24 V automotive and heavy industrial actuator interfaces where ruggedness and field-proven reliability are prioritized over digital integration or ultra-low R_DS(on).

Availability

VNV35N07-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, DC motor stall protection, and smart power distribution modules requiring stable component supply across extended product lifecycles.

Supply support for VNV35N07-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in intelligent power, microcontrollers, sensors, and automotive-grade ICs.

The VNV35N07-E belongs to ST's VIPower™ M0 family of smart power switches, designed specifically for high-reliability, high-ruggedness replacement of discrete MOSFETs in harsh automotive and industrial environments.

FAQ

What is the maximum continuous drain current for VNV35N07-E under typical PCB cooling?

The device supports 35 A continuous drain current when mounted on a 10 cm² 2-oz copper pour with 4 thermal vias, based on its 125 W PowerSO-10 power dissipation rating and 3.12 °C/W junction-to-case thermal resistance. Derating applies above 25 °C case temperature per the datasheet derating curve.

How does the diagnostic feedback mechanism work during a fault condition?

During overtemperature or short-circuit events, the internal protection circuit disconnects the INPUT pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the input voltage to ≤0.5 V, enabling detection by any microcontroller ADC or comparator without additional circuitry.

Can VNV35N07-E be driven directly by a 3.3 V microcontroller GPIO?

Yes - the input threshold voltage ranges from 0.8 V to 3 V, and the device draws only 250–500 µA from the input pin. A 3.3 V GPIO can reliably turn it on, though R_DS(on) increases to 0.035 Ω at V_IN = 5 V versus 0.028 Ω at 10 V, resulting in ~25% higher conduction loss at full load.

Is an external freewheeling diode required when switching inductive loads?

No - the integrated body diode has V_SD = 1.6 V at 18 A and t_rr = 250 ns, sufficient for most 24 V solenoid and relay applications. For high-frequency PWM or high-di/dt loads, an external Schottky diode may improve efficiency but is not mandatory for basic functionality.