STMicroelectronics VNV35NV0413TR

Overview

VNV35NV04 from STMicroelectronics is a fully autoprotected PowerSO-10™ packaged N-channel VIPower M0-3 smart power MOSFET, designed as a drop-in replacement for standard power MOSFETs in DC–25 kHz switching applications. It integrates linear current limitation (30 A), thermal shutdown (150–200 °C), overvoltage clamp (40–55 V), diagnostic feedback via input pin, and ESD protection (4 kV HBM). It serves as a robust high-side or low-side switch in automotive body control modules and industrial motor drivers.

For engineers reviewing the VNV35NV04 datasheet, VNV35NV04 pinout, VNV35NV04 application, or VNV35NV04 equivalent, this device requires attention to its integrated fault-sinking capability (10–20 mA Igf), input-series impedance requirement (≥4.7 Ω), and thermal resistance (1 °C/W junction-to-case), especially when replacing discrete MOSFETs in inductive load circuits.

Technical Context

The VNV35NV04 implements a monolithic VIPower M0-3 process with direct gate access for analog driving and built-in diagnostics. Its linear current limiter activates at 30 A (typ.) and responds within 50 µs, while overtemperature shutdown triggers between 150–200 °C and resets at ~135 °C.

Protection logic operates independently of input voltage: overvoltage clamping engages at 36 V threshold (VCLTH) and sustains up to 55 V (VCLAMP); short-circuit detection uses on-chip temperature sensing near the power stage; fault status is communicated by sinking up to 20 mA (Igf) through the INPUT pin during thermal shutdown.

Key Specifications

Pinout & Package

Package: PowerSO-10™ (10-pin exposed drain thermally enhanced SO package, JEDEC MO-249 variant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart power switch applications.

Compared with VNV35NV04, STSPIN220 lacks clamp and current-limiting headroom for inductive loads above 2 A, while IPS1021H trades 3× lower current limit for improved integration density - neither matches VNV35NV04's combination of 30 A linear limiting, 40 V clamp, and 10 mΩ R_DS(on) in PowerSO-10™.

Availability

VNV35NV04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, smart lighting ballasts, and DC motor starter circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNV35NV04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing capabilities.

VNV35NV04 belongs to the OMNIFET II family of VIPower smart switches, engineered for ruggedized replacement of discrete MOSFETs in harsh-environment DC–25 kHz switching applications with integrated protection and diagnostics.

FAQ

What is the maximum continuous drain current for VNV35NV04 under typical PCB cooling?

The device is internally current-limited to 30 A (typ.) regardless of external conditions. However, continuous operation at that level requires a properly sized heatsink and PCB copper area, as its 125 W total dissipation rating assumes T_c = 25°C. With standard FR4 and 50 mm² copper, practical continuous current is ~15–20 A depending on ambient temperature and airflow.

Can VNV35NV04 be used as a high-side switch with 5 V logic control?

Yes - its input threshold voltage (0.5–2.5 V) and low input supply current (100–150 µA) make it directly compatible with 5 V TTL/CMOS logic. When used high-side, ensure the input pin is referenced to source potential and include ≥4.7 Ω series resistance to limit fault-sink current during thermal shutdown.

How does the diagnostic feedback function during overtemperature fault?

When junction temperature exceeds 150–200 °C, the device actively sinks 10–20 mA (I_gf) through the INPUT pin. If driven by a low-impedance source (e.g., microcontroller GPIO), this pulls the input voltage toward ground, signaling fault. If the driver cannot sink that current, the INPUT pin voltage drops to ~0 V - still detectable as a logic-low fault flag.

Is an external freewheeling diode required when driving inductive loads?

No - the integrated source-drain diode has V_SD = 0.8 V at 15 A and t_rr = 400 ns, sufficient for most 25 kHz PWM applications. Its reverse recovery charge (Q_rr = 1.4 µC) and rugged avalanche rating (1.7 J) eliminate need for external flyback diodes in standard solenoid and motor drive configurations.