STMicroelectronics VNV35NV04TR-E

Overview

VNV35NV04TR-E from STMicroelectronics is a monolithic OMNIFET II fully autoprotected Power MOSFET in PowerSO-10 package, designed as a robust replacement for standard N-channel power MOSFETs in DC–25 kHz switching applications. It features 10 mΩ R_DS(on) at 15 A/25 °C, 30 A current limit, 40 V integrated overvoltage clamp, thermal shutdown, and diagnostic feedback via the input pin-enabling reliable load control in automotive body electronics and industrial motor drivers.

For engineers reviewing the VNV35NV04TR-E datasheet, VNV35NV04TR-E pinout, VNV35NV04TR-E application, or VNV35NV04TR-E equivalent, key selection criteria include linear current limiting behavior, gate-diagnostic feedback capability, junction temperature-dependent protection thresholds, and compatibility with TTL-level drive without external gate resistors.

Technical Context

This device integrates a VIPower® M0-3 process-based N-channel vertical power MOSFET with on-chip analog control circuitry for autonomous protection. Its input pin directly drives the gate but also sources/sinks diagnostic current (10–20 mA) during overtemperature fault, enabling status reporting without additional sensing components.

The internal linear current limiter activates at ~30 A (adjustable with junction temperature), while the overvoltage clamp triggers at 36 V threshold and clamps to 40–55 V. Thermal shutdown occurs between 150–200 °C, with automatic restart after ~15 °C hysteresis-ensuring fail-safe operation under sustained overload or short-circuit conditions.

Key Specifications

Pinout & Package

Package: PowerSO-10 (exposed drain pad, surface-mount, thermally enhanced). Pin count: 10 terminals. Mounting requires soldering the exposed DRAIN pad to a large copper area for thermal management per ST's recommended footprint (Figure 35).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side power switch applications.

Compared with VNV35NV04TR-E, VNB35NV04TR-E offers superior thermal resistance (1 °C/W vs. 1 °C/W case-to-junction but better ambient dissipation), while IPS1025H trades current capacity for smaller footprint-making VNV35NV04TR-E optimal for mid-range 15 A automotive loads requiring PowerSO-10 manufacturability and balanced performance.

Availability

VNV35NV04TR-E is available at Aetrix Electronics and suitable for automotive body electronics, industrial solenoid control, truck lighting systems, and smart fuse replacement requiring stable component supply and long-term production support.

Supply support for VNV35NV04TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in automotive, industrial, and power management ICs with strong IP in ruggedized power technologies.

The OMNIFET II product line delivers fully autoprotected high-side switches targeting automotive and industrial applications demanding functional safety, diagnostic capability, and high reliability in harsh environments.

FAQ

What is the maximum continuous drain current for VNV35NV04TR-E?

The device features an internally limited drain current of 30–60 A depending on junction temperature and operating conditions. At T_j = 25 °C, the typical current limit is 45 A; it decreases linearly with rising temperature, reaching ~30 A at 150 °C. This is not a rated continuous current like traditional MOSFETs-it is a dynamic protection threshold that defines safe operating envelope under fault conditions.

Can VNV35NV04TR-E be used as a low-side switch?

No-VNV35NV04TR-E is configured exclusively as a high-side switch with source terminals tied to ground and drain connected to the load. Its internal architecture, protection circuitry, and pinout assume high-side topology. Attempting low-side use would prevent proper fault detection and disable thermal shutdown functionality due to incorrect reference potential for sensing circuits.

How does the diagnostic feedback signal work during thermal shutdown?

When junction temperature exceeds the shutdown threshold (150–200 °C), the device actively sinks 10–20 mA through the INPUT pin. If driven by a low-impedance source (e.g., MCU GPIO with pull-up), this causes a measurable voltage drop across a series resistor (e.g., 1 kΩ → 10–20 V drop). If the driver has high impedance, the INPUT pin voltage collapses to near 0 V-providing two distinct, detectable fault signatures without added components.

Is external gate resistor required for safe operation?

An external gate resistor is not required for basic on/off switching, as the device accepts direct TTL-level input. However, a 4.7 Ω series resistor is recommended per datasheet (R_IN(MIN)) to control dI/dt during turn-on and ensure stable switching with minimal ringing. Omitting it may cause overshoot or oscillation in high-di/dt applications, especially with long PCB traces or inductive loads.