STMicroelectronics VNV49N04

Overview

VNV49N04 from STMicroelectronics is a fully autoprotected monolithic Power MOSFET in VIPower™ M0 technology, designed as a robust replacement for standard N-channel MOSFETs in DC–50 kHz switching applications. It delivers 49 A current limit (ILIM), 20 mΩ R_DS(on) at V_IN = 10 V, and integrated 42 V overvoltage clamp - enabling direct drive of inductive loads such as solenoids and motors in automotive body control modules.

For engineers reviewing the VNV49N04 datasheet, VNV49N04 pinout, VNV49N04 application, or VNV49N04 equivalent, key selection considerations include its linear current limiting behavior, thermal shutdown threshold (150 °C), diagnostic feedback via input pin voltage collapse, and compatibility with TTL-level logic drivers without external gate resistors.

Technical Context

The VNV49N04 integrates gate driver, protection logic, and power stage on a single die using ST's VIPower M0 process. Its input pin directly controls the internal MOSFET gate but also serves dual roles: normal switching input and fault status indicator via 100 Ω pull-down during thermal shutdown.

Protection is hardware-based and autonomous: overvoltage clamp activates at 42 V (typ.), current limiting engages at 49 A (typ.) regardless of input voltage, and junction temperature sensing triggers shutdown at ≥150 °C with automatic restart at ≤135 °C - all independent of external circuitry or supply rails.

Key Specifications

Pinout & Package

Package: PowerSO-10 (surface-mount, 10-lead exposed pad). Thermal resistance R_thj-case = 1 °C/W (max) enables high-power operation with minimal heatsink area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar protected high-side switching applications.

Compared with STSPIN32F0A and IPS1021H, the VNV49N04 uniquely combines high-current capability (49 A), low R_DS(on) (20 mΩ), and autonomous analog protection - making it optimal for standalone high-power DC switching where microcontroller resources or board space are constrained.

Availability

VNV49N04 is available at Aetrix Electronics and suitable for automotive body electronics, industrial actuator control, motor starter circuits, and DC motor speed regulation requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for VNV49N04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with vertical manufacturing and rigorous AEC-Q100 qualification processes.

The VNV49N04 belongs to ST's OMNIFET family of protected Power MOSFETs - engineered specifically for replacing discrete switches in harsh-environment DC power control applications where reliability, integration, and diagnostic capability are critical.

FAQ

What is the function of the INPUT pin during normal operation versus fault condition?

During normal operation, the INPUT pin directly drives the internal MOSFET gate with TTL-compatible voltage levels (0.8–3 V threshold). During thermal or overcurrent fault, the internal protection circuit disconnects the gate and pulls the INPUT pin to ground via a 100 Ω resistor - providing unambiguous fault detection using a single voltage measurement without additional circuitry.

Can VNV49N04 be used in high-frequency PWM applications above 50 kHz?

No - the datasheet specifies a maximum operating frequency of 50 kHz due to inherent switching time limitations (typ. t_d(on) = 200 ns, t_f = 300–900 ns) and thermal constraints under repetitive high-dV/dt conditions. For >50 kHz operation, ST recommends dedicated gate drivers paired with discrete MOSFETs optimized for RF switching performance.

How does the linear current limiter affect power dissipation during overload?

When active, the limiter forces the device into its linear region, causing R_DS(on) to rise dynamically - resulting in power dissipation up to P = I_LIM × V_DS. At 49 A and 13 V, this exceeds 600 W momentarily, necessitating strict adherence to the 35–50 µs step-response current limit window and proper heatsinking to avoid immediate thermal shutdown.

Is external flyback diode required when driving inductive loads?

No - the integrated 42 V overvoltage clamp provides sufficient energy absorption for typical solenoid and relay loads. However, for high-energy inductive loads (e.g., large contactors), an external fast-recovery diode remains recommended to reduce clamp stress and extend device lifetime, as confirmed in ST Application Note AN4099.