STMicroelectronics VNW100N04

Overview

VNW100N04 from STMicroelectronics is a fully autoprotected monolithic VIPower M0 smart power MOSFET designed for high-reliability DC–50 kHz switching in industrial motor drives, solenoid controls, and automotive body electronics. It integrates linear current limiting (100 A), overvoltage clamp (42 V), thermal shutdown (170 °C), diagnostic feedback via input pin, and direct gate access for analog driving. Its R_DS(on) of 0.012 Ω at 10 V enables low conduction loss in 12 V/24 V systems.

For engineers reviewing the VNW100N04 datasheet, VNW100N04 pinout, VNW100N04 application, or VNW100N04 equivalent, key selection criteria include its integrated fault detection capability, rugged unclamped inductive switching performance (4 J single-pulse avalanche energy), compatibility with TTL logic drive, and TO-247 package thermal resistance (0.6 °C/W junction-to-case).

Technical Context

The VNW100N04 implements ST's VIPower M0 technology to embed protection and sensing circuitry directly on the same die as the vertical N-channel power MOSFET. Its input pin serves dual roles: gate control during normal operation and fault-sink path (100 Ω) during overtemperature events, enabling status feedback without external components.

Protection functions operate independently of input voltage: current limiting activates at I_lim = 100 A (V_IN = 10 V), thermal shutdown triggers at T_jsh ≥ 170 °C, and overvoltage clamping engages at V_CLAMP = 42 V (typ.), with robust avalanche capability validated up to 4 J under unclamped inductive load conditions.

Key Specifications

Pinout & Package

Supplied in standard TO-247 package (JEDEC TO-247AC), featuring isolated metal tab for direct heatsink mounting and optimized thermal path. Mechanical dimensions per ST drawing P025P: D = 20.0 mm, E = 15.6 mm, L = 14.5 mm, weight = 4.43 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart high-side switch applications.

Compared with STSPIN840 and IPS1030H, the VNW100N04 delivers unmatched 100 A current handling and 208 W dissipation in TO-247, making it uniquely suited for high-power industrial and automotive load switching where thermal robustness and analog drive flexibility are essential.

Availability

VNW100N04 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, solenoid actuation systems, and UPS power distribution requiring stable component supply despite its obsolete status through legacy channel sourcing.

Supply support for VNW100N04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and smart power technologies since 1987.

The VNW100N04 belongs to ST's OMNIFET™ family of autoprotected high-side switches, engineered specifically for replacing mechanical relays and discrete MOSFETs in harsh-environment DC power switching applications up to 50 kHz.

FAQ

What is the maximum continuous drain current for VNW100N04?

The VNW100N04 features an internally limited drain current of 100 A at V_IN = 10 V, but continuous operation depends on thermal management. With a heatsink maintaining T_C ≤ 25 °C, its 208 W total dissipation allows sustained current up to ~100 A only in short pulses; practical continuous current is ~40–60 A depending on ambient and heatsink design.

How does the diagnostic feedback function work during a fault?

During overtemperature fault, the internal protection circuit disconnects the Input pin from the gate and connects it to ground through a 100 Ω resistor. This pulls the Input pin voltage near 0 V, allowing a microcontroller GPIO to detect the fault condition without additional components. The device automatically resets when junction temperature falls below 155 °C.

Can VNW100N04 be driven directly by a 3.3 V microcontroller?

No - the VNW100N04 requires minimum 5 V on the Input pin to achieve full R_DS(on) performance (0.015 Ω). At 3.3 V, R_DS(on) rises significantly (>0.025 Ω), increasing conduction loss and thermal stress. A level-shifting buffer or 5 V–10 V gate driver is required for reliable operation.

Is VNW100N04 suitable for bidirectional current applications?

No - the VNW100N04 is a unidirectional high-side switch with integrated source-drain diode (V_SD = 1.6 V @ 50 A). It supports reverse current only during freewheeling (e.g., inductive load decay), not active bidirectional power flow. For true bidirectional switching, discrete back-to-back MOSFETs or dedicated H-bridge ICs are required.