Vishay Semiconductor Opto Division VOW3120-X001
- Part No.:
- VOW3120-X001
- Manufacturer:
- Vishay Semiconductor Opto Division
- Category:
- Isolators - Gate Drivers
- Package:
- 8-DIP (0.400", 10.16mm)
- Datasheet:
-
VOW3120-X001.pdf
- Description:
- OPTOISO 5.3KV 1CH GATE DVR 8DIP
- Quantity:
- Payment:

- Shipping:

Inventory:2,539
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VOW3120-X001 from Vishay Semiconductors is a widebody optocoupler-based IGBT and MOSFET gate driver IC with 2.5 A peak output current, 15–32 V supply range, and integrated under-voltage lockout (UVLO) with hysteresis. It delivers isolated high-side/low-side gate drive for industrial inverters and motor drives, directly driving IGBTs up to 1200 V/100 A.
For engineers reviewing the VOW3120-X001 datasheet, VOW3120-X001 pinout, VOW3120-X001 application, or VOW3120-X001 equivalent, key selection criteria include its 50 kV/μs common-mode transient immunity, 10 mm minimum creepage, -40 °C to +100 °C operating range, and UL/cUL/CQC safety certifications for high-voltage isolation systems.
Technical Context
The VOW3120-X001 integrates an infrared LED optically coupled to a monolithic power output stage with complementary high- and low-side drivers. Its UVLO circuit activates at 11–13.5 V and deactivates at 9.5–12 V, providing 1.6 V hysteresis to prevent oscillation during brownout conditions.
It supports bidirectional gate control with symmetrical 2.5 A peak sink/source capability, operates across 15–32 V VCC–VEE, and achieves propagation delays of 0.1–0.5 μs (tPLH/tPHL) under 10 Ω/10 nF load conditions - optimized for fast-switching IGBTs in 10 kHz PWM systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | 2.5 A (supports direct gate drive of 1200 V/100 A IGBTs without external buffer) |
| Supply Voltage Range | 15 V to 32 V (enables compatibility with standard industrial DC bus rails and auxiliary supplies) |
| Common-Mode Transient Immunity | 50 kV/μs typ. (ensures robust operation in noisy inverter half-bridge environments) |
| UVLO Threshold Hysteresis | 1.6 V (prevents erratic switching during marginal supply conditions) |
| Propagation Delay | 0.1–0.5 μs (tPLH/tPHL; enables precise timing control in high-frequency motor control loops) |
| Isolation Voltage | 5300 VRMS (UL1577, 1 min; certifies safe operation in Class II industrial equipment) |
| Ambient Temperature Range | -40 °C to +100 °C (validated for use in enclosed motor drives and solar inverter enclosures) |
Pinout & Package
SMD-8 widebody package (400 mil), 10.16 mm minimum creepage and clearance, 0.75 mm max height, lead coplanarity ≤ 0.10 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A) | Anode | LED anode input; requires 10–16 mA forward current for reliable turn-on |
| 2 (C) | Cathode | LED cathode return; referenced to input ground |
| 3 (NC) | No Connect | Internally unconnected; must remain floating per datasheet |
| 4 (NC) | No Connect | Internally unconnected; must remain floating per datasheet |
| 5 (VO) | Output Driver | Power output stage source/sink node; connects to IGBT/MOSFET gate |
| 6 (NC) | No Connect | Internally unconnected; must remain floating per datasheet |
| 7 (VCC) | Positive Supply | High-side driver supply input; 15–32 V range powers output stage |
| 8 (VEE) | Negative Supply / Ground | Low-side reference; typically tied to power ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| 2.5 A peak output current | Enables direct gate drive of high-power IGBTs without discrete buffer stages, reducing BOM count and layout area |
| 50 kV/μs common-mode rejection | Maintains signal integrity across high dv/dt nodes in inverter half-bridges, eliminating false triggering |
| Under-voltage lockout with hysteresis | Prevents partial turn-on of power devices during undervoltage events, avoiding thermal runaway |
| 10 mm minimum external creepage | Meets reinforced insulation requirements for 1000 V AC working voltage in Pollution Degree 2 environments |
| UL/cUL/CQC certified | Validated for end-equipment compliance in industrial motor drives, solar inverters, and EV chargers |
Applications
| Industrial Motor Drives | Solar Inverters |
|---|---|
|
Use Scenario: Three-phase variable-frequency drives controlling induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Isolated gate driver delivering synchronized high- and low-side pulses to IGBT modules in 6-pulse inverter topology. Use Value: 2.5 A peak current ensures <100 ns rise/fall times on 10 nF gate loads, enabling >10 kHz PWM without shoot-through risk. |
Use Scenario: String-level DC-to-AC conversion in residential and commercial photovoltaic systems. IC Role / Device Role / Timing Role: High-isolation gate driver for full-bridge IGBTs in transformerless inverter designs. Use Value: 5300 VRMS isolation and 10 mm creepage meet IEC 62109 and UL 1741 SB requirements for ungrounded PV systems. |
| EV Onboard Chargers | Industrial Welding Equipment |
|
Use Scenario: Bidirectional AC/DC conversion in plug-in hybrid electric vehicle (PHEV) charging modules. IC Role / Device Role / Timing Role: Isolated gate driver for SiC MOSFETs or IGBTs in dual-active-bridge topologies. Use Value: Wide 15–32 V VCC range accommodates auxiliary supply variations during dynamic load transitions in automotive-grade designs. |
Use Scenario: High-current inverter-based arc welding power supplies with rapid duty cycling. IC Role / Device Role / Timing Role: Robust gate driver for paralleled IGBT stacks handling >500 A output currents. Use Value: -40 °C to +100 °C ambient rating and 125 °C junction temperature limit support continuous operation in thermally constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT/MOSFET gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ACPL-332J-000E | Lower 2.0 A peak output; 25 kV/μs CMR; SO-8 package (7.5 mm creepage) | Rated for ≤600 V IGBTs; suited for lower-power motor drives and UPS systems | Select when cost sensitivity outweighs need for 1200 V IGBT support and highest CMR |
| SI8233AD-D-IS | Digital isolator + gate driver; 4 A peak; 35 kV/μs CMR; 5 V logic interface | Requires external level-shifting for 15–32 V gate drive; no integrated UVLO hysteresis | Select when system uses digital controllers with SPI/I²C interfaces and needs higher peak current |
Compared with ACPL-332J-000E and SI8233AD-D-IS, the VOW3120-X001 provides superior isolation robustness (5300 VRMS, 10 mm creepage) and native high-voltage gate drive capability (15–32 V, 2.5 A), making it optimal for industrial-class inverters where reliability under high dv/dt and pollution degree 2 conditions is critical.
Availability
VOW3120-X001 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for VOW3120-X001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors and optoelectronics, specializing in high-reliability components for industrial, automotive, and power systems.
The VOW3120 family was designed specifically for isolated gate driving in high-voltage power conversion, emphasizing safety certification, noise immunity, and direct high-current drive capability without external buffers.
FAQ
What is the maximum IGBT voltage rating supported by the VOW3120-X001?
The VOW3120-X001 is specified to directly drive IGBTs rated up to 1200 V and 100 A. Its 2.5 A peak output current, 5300 VRMS isolation, and 10 mm creepage distance ensure safe and reliable operation in 1200 V-class inverter applications. For IGBTs exceeding these ratings, the VOW3120-X001 can drive an external discrete power stage. This capability is explicitly confirmed in the Vishay datasheet Document Number 82442, Rev. 1.3.
Does the VOW3120-X001 require an external bootstrap capacitor?
No, the VOW3120-X001 does not require an external bootstrap capacitor. It operates from a single 15–32 V isolated supply (VCC–VEE) and integrates both high-side and low-side driver stages within one optocoupler package. The internal architecture eliminates the need for charge-pump or bootstrap networks, simplifying PCB layout and improving reliability in high-voltage applications. This is verified in the "DESCRIPTION" and "RECOMMENDED OPERATING CONDITION" sections of the official Vishay datasheet.
What safety certifications apply to the VOW3120-X001?
The VOW3120-X001 carries UL, cUL, and CQC GB4943.1/GB8898 certifications. It also meets DIN EN 60747-5-5 (VDE 0884-5) when ordered with option 1 - though the VOW3120-X001 variant itself is certified to UL1577 (5300 VRMS, 1 min) and features reinforced insulation with ≥10 mm creepage and clearance. All certifications are documented in the "AGENCY APPROVALS" section of Vishay's datasheet 82442.
Can the VOW3120-X001 drive both N-channel and P-channel MOSFETs?
Yes, the VOW3120-X001 can drive both N-channel and P-channel MOSFETs. Its complementary output stage provides active high- and low-side drive with symmetrical 2.5 A sink/source capability and rail-to-rail output voltage swing (VO = 0 to VCC). When configured with appropriate gate resistor networks and supply referencing, it supports high-side P-channel or low-side N-channel configurations - as confirmed in the "ELECTRICAL CHARACTERISTICS" table (IOH/IOL, VOH/VOL) and application diagrams in the Vishay datasheet.
What is the purpose of pins 3, 4, and 6 labeled NC on the VOW3120-X001?
Pins 3, 4, and 6 on the VOW3120-X001 are designated No Connect (NC) and are internally unconnected. The Vishay datasheet explicitly states these pins "must remain floating" and warns against routing traces or applying bias to them, as doing so may compromise isolation integrity or cause unpredictable behavior. This requirement is specified in the "PACKAGE DIMENSIONS" and "PIN CONFIGURATION" notes of Document Number 82442, Rev. 1.3.
VOW3120-X001 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Semiconductor Opto Division
- Series:
- -
- Package/Case:
- 8-DIP (0.400", 10.16mm)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Optical Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5300Vrms
- Common Mode Transient Immunity (Min):
- 25kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 500ns, 500ns
- Pulse Width Distortion (Max):
- 300ns
- Rise / Fall Time (Typ):
- 100ns, 100ns
- Current - Output High, Low:
- 2.5A, 2.5A
- Current - Peak Output:
- 2.5A
- Voltage - Forward (Vf) (Typ):
- 1.36V
- Current - DC Forward (If) (Max):
- 25 mA
- Voltage - Output Supply:
- 15V ~ 32V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 100°C
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 8-DIP
- Approval Agency:
- CQC, cUL, UL, VDE
VOW3120-X001 FAQ
1.How can I place an order for VOW3120-X001 through Aetrix?
Please submit a Request for Quotation (RFQ) for VOW3120-X001 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VOW3120-X001 reliable?
The price and inventory of VOW3120-X001 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VOW3120-X001 is usually 5 days.
3.What payment methods are accepted for VOW3120-X001?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VOW3120-X001 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VOW3120-X001?
VOW3120-X001 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VOW3120-X001 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VOW3120-X001?
For technical support, including VOW3120-X001 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VOW3120-X001 requirements.
6.How does Aetrix verify that VOW3120-X001 is sourced from the original manufacturer or authorized distributors?
All VOW3120-X001 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VOW3120-X001 meets industry standards.
7.What is the process for return or replacement of VOW3120-X001?
All VOW3120-X001 units undergo pre-shipment inspection (PSI). If there is an issue with VOW3120-X001, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VOW3120-X001 part is unused and in its original packaging.
Return procedure for VOW3120-X001:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VOW3120-X001 Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

